A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces

Abstract

Articles you may be interested inStructure and morphology of the As-rich and the stoichiometric GaAs (114)A surface J. Appl. Phys. 95, 7645 (2004); 10.1063/1.1707212 GaAs(311) templates for molecular beam epitaxy growth: surface morphologies and reconstruction

Arsenic-rich GaAs(0 0 1) surface structure

“…Combining MBE with in situ STM has been accomplished in several systems [36][37][38][39]26]. The common approach is to custom build the MBE [38] and/or the STM [36,37], which limits the development of these systems to experts in the relating domain.…”

“…The common approach is to custom build the MBE [38] and/or the STM [36,37], which limits the development of these systems to experts in the relating domain. A different approach is to connect two commercially available MBE and STM facilities via a third custom built UHV chamber [39,26].…”

Shape of InAs quantum dots grown on the GaAs (1̄ 1̄ 3̄) B surface

“…13 Samples with a typical size of about 5ϫ10 mm 2 were cut from a GaAs (1 1 3 ) B wafer ͑n-type, Si-doped, carrier concentration 1.4-4.8ϫ10 18 cm Ϫ3 , Wafer Technology͒. The samples were cleaned by several ion bombardment and annealing cycles.…”

Experimental evidence for a stable GaAs surface near (113)

“…Then the samples were introduced into a multichamber ultrahigh-vacuum system, which is described in detail elsewhere. 9 After oxide desorption samples were treated with several ionbombardment and annealing ͑IBA͒ cycles. SEM experiments carried out after this step showed that IBA is an effective method to remove the scratches from the last polishing.…”