Abstract:We have processed and characterised front (P-Grid) and back (N-Grid) illuminated strain balanced multi-quantum well InGaAs/InP thermophotovoltaic cells with a bandedge at 1980nm. We find that the inverted cells (N-Grid) dark currents are comparable to the conventional (P-Grid) MQW cells and have power conversion efficiencies of 10% under AM0 incident radiation. Inverted cells are shown to have better performance at high power densities, with improved fill factors of 74% compared to 62-67% for conventional illu… Show more
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