A comparative study of silicon detector degradation under irradiation by heavy ions and relativistic protons

Eremin, V.; Mitina, D.; Фомичев, А. С.; Kiselev, O.; Egorov, N. N.; Eremin, I. V.; Shepelev, A.; Verbitskaya, E.

doi:10.1088/1748-0221/13/01/p01019

Cited by 6 publications

(9 citation statements)

References 15 publications

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“…The numbers are in reasonable agreement with the experimental results reported in [107]. Only recently, a careful experimental study on the damage caused by 40.5 AMeV 40 Ar-ions relying on depleted p + − n − n + silicon detectors [108] was published. The results of this study suggests that those ions generate a non-ionizing radiation damage equivalent to ∼ 10 n eq /cm 2 .…”

Section: Integrated Displacement Damage Caused By Heavy Ionssupporting

confidence: 89%

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Deveaux¹

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CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Unlike to most other silicon radiation detectors, they rely on standard CMOS technology. This cost efficient approach allows for building particularly small and thin pixels but also introduced, until recently, substantially constraints on the design of the sensors. The most important among them is the missing compatibility with the use of PMOS transistors and depleted charge collection diodes in the pixel. Traditional CPS were thus first of all suited for vertex detectors of relativistic heavy ion and particle physics experiments, which require highest tracking accuracy in combination with moderate time resolution and radiation tolerance. This work reviews the R&D on understanding and improving the radiation tolerance of traditional CPS with non- and partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. It introduces the specific measurement methods used to assess the radiation tolerance of those non-standard pixels. Moreover, it discusses the major mechanisms of radiation damage and procedures for radiation hardening, which allowed to extend the radiation tolerance of the devices by more than an order of magnitude.

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Section: Integrated Displacement Damage Caused By Heavy Ionssupporting

confidence: 89%

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Deveaux¹

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“…The numbers are in reasonable agreement with the experimental results reported in [103]. A recent experimental study on the damage caused by 40.5 AMeV 40 Ar-ions relying on depleted p + − n − n + silicon detectors [104] suggests that those ions generate a non-ionizing radiation damage equivalent to ∼ 10 n eq /cm 2 . As stated in the paper, this result is not compatible with the previously mentioned theoretical calculations and observations, which remains to be understood.…”

Section: Integrated Displacement Damage Caused By Heavy Ionssupporting

confidence: 89%

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Deveaux

2019

J. Inst.

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A: CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into 50 µm thin sensors, which provide an outstanding typical spatial resolution of few µm and a detection efficiency for minimum ionizing particles above 99.9%. The radiation tolerance of CPS was initially constrained by the limits of the CMOS processes used for their production but has been improved by orders of magnitudes during the last years.This work reviews the related R&D on the radiation tolerance of traditional CPS with partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. Procedures for assessing radiation damage in those non-standard pixels are discussed and the major mechanisms of radiation damage are introduced. Techniques for radiation hardening are shown. Moreover, recent results on next generation CPS featuring fully depleted sensors based on improved CMOS processes are summarized.

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“…Radiation damages have been investigated thoroughly for silicon detectors [17][18][19][20] and even considering heavy ions [21][22][23]. According to Shiraishi et al, fission fragments produce more defects than lighter particles [21]; Kurokawa et al go further and evaluate the damages in silicon detectors as being 10 3 to 10 5 times larger for heavy ions than for protons [22].…”

Section: Behavior As a Function Of The Beam Intensitymentioning

confidence: 99%

First investigation of the response of solar cells to heavy ions above 1 AMeV

Henriques

Jurado

Pibernat

et al. 2020

Nuclear Instruments and Methods in Physics Research Section A:

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Solar cells have been used since several decades for the detection of fission fragments at about 1 AMeV. The advantages of solar cells regarding their cost (few euros) and radiation damage resistance make them an interesting candidate for heavy ion detection and an appealing alternative to silicon detectors. A first exploratory measurement of the response of solar cells to heavy ions at energies above 1 AMeV has been performed at the GANIL facility, Caen, France. Such measurements were performed with 84 Kr and 129 Xe beams ranging from 7 to 15 AMeV. The energy and time response of several types of solar cells were studied. The best performance was observed for cells of 10 x10 mm 2 , with an energy and time resolution of σ(E)/E=1.4% and 3.6 ns (FWHM), respectively. Irradiations at rates from a few hundred to 10 6 particles per second were also performed to investigate the behavior of the cells with increasing intensity.

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A comparative study of silicon detector degradation under irradiation by heavy ions and relativistic protons

Cited by 6 publications

References 15 publications

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

First investigation of the response of solar cells to heavy ions above 1 AMeV

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