A comprehensive characterization of the interfaces in Mo/CIS/CdS/ZnO solar cell structures

Schmid, D. O.; Ruckh, M.; Schock, H.W.

doi:10.1016/0927-0248(95)00107-7

Cited by 180 publications

(91 citation statements)

References 7 publications

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“…In earlier studies, it was found that a vacancy compound (VC) forms at the surface of Cu-poor CISe layers 33 (in Ref. 33, the VC layer is denoted as ordered defect compound (ODC)). A bandgap energy of approximately 0.3 eV larger than that of the corresponding CISe layer was determined.…”

Section: Discussionmentioning

confidence: 99%

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Nichterwitz

Caballero

Kaufmann

et al. 2013

Journal of Applied Physics

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Cross section electron-beam induced current (EBIC) and illumination-dependent current voltage (IV) measurements show that charge carrier transport in Cu(In,Ga)Se2 (CIGSe)/CdS/ZnO solar-cells is generation-dependent. We perform a detailed analysis of CIGSe solar cells with different CdS layer thicknesses and varying Ga-content in the absorber layer. In conjunction with numerical simulations, EBIC and IV data are used to develop a consistent model for charge and defect distributions with a focus on the heterojunction region. The best model to explain our experimental data is based on a p+ layer at the CIGSe/CdS interface leading to generation-dependent transport in EBIC at room temperature. Acceptor-type defect states at the CdS/ZnO interface cause a significant reduction of the photocurrent in the red-light illuminated IV characteristics at low temperatures (red kink effect). Shallow donor-type defect states at the p+ layer/CdS interface of some grains of the absorber layer are responsible for grain specific, i.e., spatially inhomogeneous, charge carrier transport observed in EBIC.

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Section: Discussionmentioning

confidence: 99%

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Nichterwitz

Caballero

Kaufmann

et al. 2013

Journal of Applied Physics

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“…Na (from the soda-lime glass substrate) is reported to diffuse through the Mo back contact layer at temperatures as low as 200 C. 23 2. Na accumulates at the CIGSe/Mo interface, 16,24 the surface (in the surface-near region) of the CIGSe absorber, 6,24 and the grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

Song

Caballero

Félix

et al. 2012

Journal of Applied Physics

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The following article appeared in Journal of Applied Physics 111.3 (2012): 034903 and may be found at http://scitation.aip.org/content/aip/journal/jap/111/3/10.1063/1.3679604Na has deliberately been incorporated into Cu(In,Ga)Se2 (CIGSe) chalcopyrite thin-film solar cell absorbers deposited on Mo-coated polyimide flexible substrates by adding differently thick layers of NaF in-between CIGSe absorber and Mo back contact. The impact of Na on the chemical and electronic surface structure of CIGSe absorbers with various Cu-contents deposited at comparatively low temperature (420 C) has been studied using x-ray photoelectron and x-ray excited Auger electron spectroscopy. We observe a higher Na surface content for the Cu-richer CIGSe samples and can distinguish between two different chemical Na environments, best described as selenide-like and oxidized Na species, respectively. Furthermore, we find a Cu-poor surface composition of the CIGSe samples independent of Na content and - for very high Na contents - indications for the formation of a (Cu,Na)-(In,Ga)-Se like compound. With increasing Na surface content, also a shift of the photoemission lines to lower binding energies could be identified, which we interpret as a reduction of the downward band bending toward the CIGSe surface explained by the Na-induced elimination of In Cu defects.X.S., R.F., D.G., R.G.W., and M.B. are grateful to the Helmholtz-Association for financial support (VH-NG-423). R.F. also acknowledges the support by the German Academic Exchange Agency (DAAD; 331 4 04 002)

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“…8 In most high-efficiency chalcopyrite-based solar cells, an absorber layer of the chalcopyrite is deposited by expensive vacuum-based processes, such as evaporation and sputtering. [9][10][11] The world record efficiency (as high as 20.3%) was based on a Cu(In,Ga)Se 2 thin film by Jackson et al, in which each element was co-evaporated in a three-stage process. 12 However, these vacuum-based deposition techniques require expensive equipment and are difficult to scale up the deposition area for commercial production.…”

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confidence: 99%

The Effect of Sulfurization Temperature on CuIn(Se,S)₂Solar Cells Synthesized by Electrodeposition

Kim

Kwon

Lee

et al. 2014

J. Electrochem. Soc.

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The properties of thin film solar cells based on electrodeposited CuIn(Se,S)2 were investigated. The proposed solar cell fabrication method involves a single-step CuInSe2 thin film electrodeposition followed by sulfurization in a tube furnace to form a CuIn(Se,S)2 quaternary phase. A sulfurization temperature of 450–550°C significantly affected the performance of the CuIn(Se,S)2 thin film solar cell in addition to its composition, grain size and bandgap. Sulfur(S) substituted for selenium(Se) at increasing rates with higher sulfurization temperature, which resulted in an increase in overall bandgap of the CuIn(Se,S)2 thin film. The highest conversion efficiency of 3.12% under air mass (AM) 1.5 illumination was obtained from the 500°C-sulfurized solar cell. The highest External Quantum Efficiency (EQE) was also observed at the sulfurization temperature of 500°C.

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A comprehensive characterization of the interfaces in Mo/CIS/CdS/ZnO solar cell structures

Cited by 180 publications

References 7 publications

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

The Effect of Sulfurization Temperature on CuIn(Se,S)₂Solar Cells Synthesized by Electrodeposition

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A comprehensive characterization of the interfaces in Mo/CIS/CdS/ZnO solar cell structures

Cited by 180 publications

References 7 publications

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Generation-dependent charge carrier transport in Cu(In,Ga)Se2/CdS/ZnO thin-film solar-cells

Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure

The Effect of Sulfurization Temperature on CuIn(Se,S)2Solar Cells Synthesized by Electrodeposition

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The Effect of Sulfurization Temperature on CuIn(Se,S)₂Solar Cells Synthesized by Electrodeposition