A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell

Emon, E.I.; Islam, Ashraful; Sobayel, K.; Islam, Saiful; Akhtaruzzaman, Md.; Amin, Nowshad; Ahmed, Abrar; Rashid, Mohammad Junaebur

doi:10.1016/j.heliyon.2023.e14438

Cited by 7 publications

(4 citation statements)

References 53 publications

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“…Figure a shows the plots between the areal capacitance versus voltage at different operating temperatures. The capacitance behavior shows a similar trend as previously reported articles . As the potential value increases, the areal capacitance value also increases exponentially as shown in the figure until it reaches a maximum value.…”

Section: Resultssupporting

confidence: 87%

“…The capacitance behavior shows a similar trend as previously reported articles. 47 As the potential value increases, the areal capacitance value also increases exponentially as shown in the figure until it reaches a maximum value. From Figure 9a, it can be observed that the areal capacitance values are higher at higher temperatures.…”

Section: ■ Results and Discussionmentioning

confidence: 83%

“…From these plots, the V bi values were estimated and it was observed that these values keep on decreasing as the temperature increases, which can be deemed responsible for the increment of the areal capacitance value along with temperature as the areal capacitance is inversely related to the V bi . This relation is given below. , C A = √ ( ε 0 ε normalr q N D 2 ( V normalbi − V ) ) …”

Section: Resultsmentioning

confidence: 99%

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Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS₂) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

Sinha

2024

Langmuir

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The domain related to the use of renewable energy is showing high interest among the researchers in the current days, and light energy can be considered as one of such. Solar cells are the kind of devices that use light energy in an efficient way to generate electricity. Hence, designing and developing a solar cell requires meticulous attention to get an optimum output. This work focuses on designing and optimization of aluminum dope ZnO/phenyl-C-butyric acid methyl ester/tungsten disulfide (AZO/PCBM/WS2) heterojunction-based device for applications in solar cells. Moreover, considering the high demand of optoelectronics like photodetectors, this work also uncovers the capabilities of the device in the applications of broadband self-powered photodetectors. The optimized values of several parameters of the device such as the thickness and doping density of the WS2 layer, the defect density of the WS2 layer, and the interface PCBM/WS2 were 2 μm, 1017 cm–3, 1014 cm–3, and 1010 cm–2, respectively. These optimal conditions facilitated in obtaining fill factor and efficiency values of 84.78 and 23.92%, respectively. Further, the photodetection performance was evaluated with the parameters like responsivity and detectivity. The maximum calculated responsivity of the device at 0 V bias was 0.63 A/W at 880 nm, whereas the maximum detectivity was 1.54 × 1013 Jones. This study also extensively focuses on the in-depth understanding of the physics associated with the movement of the charge carriers under the illuminated conditions by studying the band diagrams and the electric fields of the heterojunctions at various conditions.

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Section: Resultssupporting

confidence: 87%

Section: ■ Results and Discussionmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

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Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS₂) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

Sinha

2024

Langmuir

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“…The Jsc deterioration becomes more noticeable from a defect density concentration of about 1 × 10 16 cm −3 at all E t above the valence band. This is clearly due to the recombination rate surge, which reduces the carrier lifetime 42 . Poor FF has resulted at a lower E t than higher ones toward the middle of the band gap.…”

Section: Resultsmentioning

confidence: 99%

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

Isah,

Doroody,

Rahman

et al. 2024

Sci Rep

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A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015 cm−3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (ƞ) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film’s thickness. An acceptable defect density of up to 1015 cm−3 at a CdTe thickness of 300 nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7 eV in tandem with a Si bandgap of about 1.1 eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer.

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Numerical Optimization of Thickness and Optical Band Gap of Absorber and Buffer Layers in Earth-Abundant Cu2ZnSnS4 Thin-Film Solar Cells

Achour,

Khemiri,

Kanzari

2024

J. Electron. Mater.

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A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell

Cited by 7 publications

References 53 publications

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS₂) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS₂) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

Numerical Optimization of Thickness and Optical Band Gap of Absorber and Buffer Layers in Earth-Abundant Cu2ZnSnS4 Thin-Film Solar Cells

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A comprehensive photovoltaic study on tungsten disulfide (WS2) buffer layer based CdTe solar cell

Cited by 7 publications

References 53 publications

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS2) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS2) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

Numerical Optimization of Thickness and Optical Band Gap of Absorber and Buffer Layers in Earth-Abundant Cu2ZnSnS4 Thin-Film Solar Cells

Contact Info

Product

Resources

About

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS₂) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors

Design of Aluminum Doped ZnO/Phenyl-C-Butyric Acid Methyl Ester/Tungsten Disulfide (AZO/PCBM/WS₂) Heterojunction-Based Device for Applications in Solar Cells and Broadband Self-Powered Photodetectors