A comprehensive study on Cu2SnS3 prepared by sulfurization of Cu–Sn sputtered precursor for thin-film solar cell applications

Abdel-Latif, Mohamed S.; Magdy, Wafaa; Tosuke, Taichi; Kanai, Ayaka; Hessein, Amr; Shaalan, Nagih M.; Nakamura, Kōichi; Sugiyama, Mutsumi; Abdel-Moniem, Ahmed

doi:10.1007/s10854-020-04018-x

Cited by 9 publications

(7 citation statements)

References 47 publications

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“…The efficiency of CdTe photovoltaic cells is approaching about 20% in the laboratory and recorded at about 22.1% in 2016 [52], while the reported efficiency for CdTe photoelectrochemical cell is about 5% [53]. Therefore, the estimated range of PEC efficiencies for chalcogenide CBSe thin films is in good agreement with the previous studies about thin-film chalcogenides [12,13]. Summary of the electrodeposition process through the two different successively and simultaneously applied ways is given in Table 1, providing an inclusive comparison between the two ways from where the electrodeposition conditions, studied parameters, and main obtained results.…”

Section: Photoelectrochemical Characterizationsupporting

confidence: 90%

“…Among all these elements, copper is still recognized as a cost-effective, environmentally benign, and highly abundant metal. Considering this fact, huge considerable efforts have been devoted to preparing copper-based chalcogenides of the groups (I-V-VI) acting as efficient light absorbers for upgrading thin-film PV applications [11,12]. Particularly, Cu-Bi-Se (CBSe) ternary system has recently attracted much attention, because the usage of Cu-Bi-Se (CBSe) thin-film demonstrates a high absorption coefficient > 10 5 cm −1 and a wide bandgap range of 1.2-1.5 eV as well as good photoactivity for solar light absorption [11,13].…”

Section: Introductionmentioning

confidence: 99%

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Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

et al. 2022

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Thin-film deposition using electrodeposition techniques is highly preferable because of its capability to deposit multi-component alloys at low temperatures. In this regard, copper bismuth selenide (CBSe) films were electrodeposited in two various ways, simultaneous and successive electrodeposition processes. The structural and morphological characterizations of the obtained films were performed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray analysis (EDX), and X-ray Photoelectron Spectrometer (XPS). The CBSe alloy films formed by successive electrodeposition revealed better crystallinity and more regular morphology in comparison with simultaneous electrodeposited CBSe films. The prepared CBSe film by successive electrodeposition exhibited high light absorptivity and low band gap energy value (Eg = 1.65 eV) resulting in a higher photoelectrical response. The crystallization of the ternary CBSe film electrodeposited via successive routine obeyed the instantaneous nucleation mechanism, while the CBSe film obtained by simultaneous electrodeposition agreed with the progressive nucleation mechanism. Successive electrodeposition of ternary CBSe alloy film achieved greater values of photocurrent–voltage conversion efficiency (η = 1.26%) in photoelectrochemical systems. Graphic abstract

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Section: Photoelectrochemical Characterizationsupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

et al. 2022

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“…The stacks prepared with Cu at the bottom have a similar mixed structure regardless of the annealing temperature (Fig. 5 a), with several peaks characteristic to the monoclinic (257, 290, 317, 352 and 370 cm −1 ) 58 and the tetragonal (287, 297 and 338 cm −1 ) 17 , 54 structures. Figure 5 b shows the Raman spectra of the SLG\SnS 2 \Cu stack sulfurized at temperatures between 300 and 500 °C.…”

Section: Resultsmentioning

confidence: 90%

“…Among these compounds, Cu 2 SnS 3 (CTS) has attracted particular attention due to its potential to be used as small band semiconductors for infrared photodetectors, but also for photocatalytic, optoelectronic, and supercapacitor applications 11 – 16 . CTS is also regarded as a precursor for the synthesis of CZTS materials used in solar cells devices 17 , 18 . A highly crystalline CZTS phase can be obtained by the optimization of the Cu 2 SnS 3 synthesis conditions and the addition of a ZnS layer 19 on top of CTS.…”

Section: Introductionmentioning

confidence: 99%

Effect of the stacking order, annealing temperature and atmosphere on crystal phase and optical properties of Cu2SnS3

Zaki

Sava

Şimăndan

et al. 2022

Sci Rep

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Cu2SnS3 (CTS) is emerging as a promising absorber for the next generation thin film solar cells (TFSC) due to its excellent optical and electronic properties, earth-abundance and eco-friendly elemental composition. In addition, CTS can be used as precursor films for the Cu2ZnSnS4 (CZTS) synthesis. The optical properties of CTS are influenced by stoichiometry, crystalline structure, secondary phases and crystallite size. Routes for obtaining CTS films with optimized properties for TFSC are still being sought. Here, the CTS thin films synthesized by magnetron sputtering on soda lime glass (SLG) using Cu and SnS2 targets in two different stacks, were studied. The SLG\Cu\SnS2 and SLG\SnS2\Cu stacks were annealed in S and Sn + S atmospheres, at various temperatures. Both stacks show a polymorphic structure, and higher annealing temperatures favor the monoclinic CTS phase formation. Morphology is influenced by the stacking order since a SnS2 top layer generates several voids on the surface due to the evaporation of SnS, while a Cu top layer provides uniform and void-free surfaces. The films in the copper-capped stack annealed under Sn + S atmosphere have the best structural, morphological, compositional and optical properties, with tunable band gaps between 1.18 and 1.37 eV. Remarkably, secondary phases are present only in a very low percent (< 3.5%) in samples annealed at higher temperatures. This new synthesis strategy opens the way for obtaining CTS thin films for solar cell applications, that can be used also as intermediary stage for CZTS synthesis.

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“…Such parameters make CTS be applied in a wide range of applications such as solar cells [6,7], visible and IR wavelength photodetector [8,9], thermoelectric material [10,11], electrochemical storage devices such as batteries and supercapacitors [12,13], and photocatalysis [14,15].…”

Section: Introductionmentioning

confidence: 99%

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

Abdel-Latif

Rezk

Abdel-Moniem

et al. 2021

Preprint

Self Cite

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In this study, the synthesis of Cu2SnS3 (CTS) nanoparticles by solvothermal method using different sulfur precursors is reported. The influence of sulfur precursors on the structure, optical and electrical properties of prepared CTS material is investigated. The sulfur precursor sources have showed a noticeable effect on crystallite size, secondary phases, and resulted CTS nanoparticles structure. Among the four sulfur precursor sources used in this study, thiourea is the only sulfur source that produces CTS with a cubic structure and without the need for thermal treatment. Whereas after sulfurization at 580 ºC, all the four samples attained CTS nanoparticles with diverse properties. Changing the sulfur precursors have clear effects on crystallite size and optical bandgap prepared samples as they ranged from 11.21 to 21.23 nm and from 1.4 to 1.7 eV, respectively. Additionally, Hall effect measurement revealed that all CTS samples are p-type semiconductors with bulk carrier concentrations in 1018 order, which is suitable for various optoelectronic applications such as photovoltaics and photodetectors.

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A comprehensive study on Cu2SnS3 prepared by sulfurization of Cu–Sn sputtered precursor for thin-film solar cell applications

Cited by 9 publications

References 47 publications

Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

Influence of the electrochemical processing parameters on the photocurrent–voltage conversion characteristics of copper bismuth selenide photoactive films

Effect of the stacking order, annealing temperature and atmosphere on crystal phase and optical properties of Cu2SnS3

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

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