A cyclopentasilane–borane compound as a liquid precursor for p-type semiconducting Si

Masuda, Takashi; Nakayama, Maui; Saito, Kimihiko; Katayama, Hirotaka; Terakawa, Akira

doi:10.1039/d1tc00165e

Cited by 4 publications

(2 citation statements)

References 30 publications

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“…To reduce the consumption and cost of CPS ink and to improve its printing resolution, Masuda et al demonstrated nanoimprint of CPS 8) and other variety of fabrication techniques. [9][10][11][12][13] Regardless all these studies were still laboratory in scale using small dimensional substrates.…”

Section: Introductionmentioning

confidence: 99%

Slot-die coating of silicon ink for volume production of CMOS polysilicon TFTs

Ito¹,

Kamath²

2021

Jpn. J. Appl. Phys.

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A large-area polysilicon film was formed from slot-die coating of cyclopentasilane based silicon ink and laser crystallization. In this article a study of silicon ink preparation and selection, slot-die coater setup, coating and laser crystallization is described. The polysilicon film was applied to fabricate complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs) which were used to develop and demonstrate near field communication devices. This was part of a hybrid process flow consisting of conventional lithography and printing to fabricate CMOS TFTs. Slot-die coating of silicon ink on a 300 mm square 100 μm thick stainless steel substrate is a key building block of this hybrid process flow to subtract and replace high capital cost plasma enhanced chemical vapor deposition (PECVD), ion implantation and silicon wafers. With slot-die coating of silicon ink, a silicon layer formation equivalent to PECVD in quality was achieved.

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Section: Introductionmentioning

confidence: 99%

Slot-die coating of silicon ink for volume production of CMOS polysilicon TFTs

Ito¹,

Kamath²

2021

Jpn. J. Appl. Phys.

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“…With the addition of BMS into PHPS, the N-H and Si-H groups of PHPS and the B-H (2391 cm −1 , stretching vibration) groups of BMS are consumed, while B-N groups (1315 cm −1 ) are formed simultaneously, as shown in the spectra of BPSZX precursors. Hence, dehydrocoupling reactions between the N-H (Si-H) and B-H groups are proposed as reaction mechanisms and are shown schematically in Fig.2[40,41]. Unlike the N-H groups, which are reacted in a high amount, only a small number of the Si-H groups are involved in the modification process.…”

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confidence: 99%

Boron-modified perhydropolysilazane towards facile synthesis of amorphous SiBN ceramic with excellent thermal stability

Zhan

Li²,

Jiang³

et al. 2022

J Adv Ceram

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SiBN ceramics are widely considered to be the most promising material for microwave-transparent applications in harsh environments owing to its excellent thermal stability and low dielectric constant. This work focuses on the synthesis and ceramization of single-source precursors for the preparation of SiBN ceramics as well as the investigation of the corresponding microstructural evolution at high temperatures including molecular dynamic simulations. Carbon- and chlorine-free perhydropolysilazanes were reacted with borane dimethyl sulfide complex at different molar ratios to synthesize single-source precursors, which were subsequently pyrolyzed and annealed under N2 atmosphere (without ammonolysis) to prepare SiBN ceramics at 1100, 1200, and 1300 °C with high ceramic yield in contrast to previously widely-used ammonolysis synthesis process. The obtained amorphous SiBN ceramics were shown to have remarkably improved thermal stability and oxidation resistance compared to amorphous silicon nitride. Particularly, the experimental results have been combined with molecular dynamics simulation to further study the amorphous structure of SiBN and the atomic-scale diffusion behavior of Si, B, and N at 1300 °C. Incorporation of boron into the Si—N network is found to suppress the crystallization of the formed amorphous silicon nitride and hence improves its thermal stability in N2 atmosphere.

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Stability analysis and solutions of fractional boundary value problem on the cyclopentasilane graph

Wang,

Yuan,

Baleanu

2024

Heliyon

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A cyclopentasilane–borane compound as a liquid precursor for p-type semiconducting Si

Abstract: Although little is known about the reaction mechanism between cyclopentasilane (CPS: cyclic Si5H10) and borane (BH3), the reaction product is known to be a liquid precursor for p-type semiconducting Si....

Cited by 4 publications

References 30 publications

Slot-die coating of silicon ink for volume production of CMOS polysilicon TFTs

Slot-die coating of silicon ink for volume production of CMOS polysilicon TFTs

Boron-modified perhydropolysilazane towards facile synthesis of amorphous SiBN ceramic with excellent thermal stability

Stability analysis and solutions of fractional boundary value problem on the cyclopentasilane graph

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