A DC-2.5GHz voltage variable attenuator in 0.18-&amp;#x03BC;m CMOS technology

Abdalla, Ibrahim L.; Allam, Ahmed; Pokharel, Ramesh K.; Jia, Hongting

doi:10.1109/apccas.2014.7032792

Cited by 4 publications

(1 citation statement)

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“…CMOS attenuators are developed for their characteristics of linearity and low power consumption compared with variable gain amplifiers. Meanwhile, poor return loss and large additive phase-shift constrain the performance of CMOS attenuators [1,2,3]. RF-MEMS technology is adopted in attenuator design for wide frequency range and low insertion loss of the switch.…”

Section: Introductionmentioning

confidence: 99%

Design of a low-insertion-phase-shift MMIC attenuator integrated with a serial-to-parallel converter

Wang¹,

Wang²,

Wang³

et al. 2017

IEICE Electron. Express

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This work presents a monolithic DC∼4 GHz 6-bit digital attenuator with low insertion phase shift and attenuation error. Based on GaAs E/D pHEMT process, a serial-to-parallel converter is introduced to decrease the control pads of the chip. In the 16 dB attenuation bit, a switched-path-type topology is employed in order to extend the bandwidth and achieve low insertion phase shift. The attenuator has 0.5 dB resolution and 0∼31.5 dB attenuation range. Measurement shows less-than-2.3 dB insertion loss at reference state, and larger-than-14 dB return loss at all states. An rms attenuation error of less-than-0.3 dB and phase-shift-variations less than 2 deg are achieved. The size of the chip is 2.0 mm × 1.7 mm.

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Section: Introductionmentioning

confidence: 99%