This article presents a design of a VCO‐based ADC based on n‐type metal oxide thin‐film transistor (TFT). The TFTs are fabricated on a glass substrate using Indium Zinc Oxide technology. The VCO‐based ADC consists of a VCO, a level shifter and a sampling circuit, while the VCO is composed of a charge‐discharge cell and an inverter chain. The ADC has a 1.464 mm 2 area, 0.89 mW power consumption, an output frequency range of 1.41 KHz/V tuning sensitivity, 1.8% maximum linear error and achieves a SNDR of 34.2 dB in the case of an input signal of 1.5 Hz and a sampling rate of 20 S/s.