A facile method to synthesize high-quality ZnS(Se) quantum dots for photoluminescence

Shen, Fengyu; Que, Wenxiu; Yin, Xingtian; Huang, Yong-fu; Jia, Qiaoying

doi:10.1016/j.jallcom.2011.06.061

Cited by 16 publications

(4 citation statements)

References 35 publications

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“…For CdS particles that are smaller than 2.4 nm, noticeable blue‐shifts in their optical absorption and PL spectra manifest relative to bulk 91. The same is true for other semiconductor QD systems when they approach sizes smaller than their respective Bohn radii, such as CdSe,92 CdTe,93 ZnS,94 ZnSe,95 and Si 96 . Figure shows the UV‐Vis electronic absorption (left) and PL (right) spectra of differently sized CdTe QDs 97.…”

Section: Optical Propertiesmentioning

confidence: 81%

Exciton Dynamics in Semiconductor Nanocrystals

2013

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This review article provides an overview of recent advances in the study and understanding of dynamics of excitons in semiconductor nanocrystals (NCs) or quantum dots (QDs). Emphasis is placed on the relationship between exciton dynamics and optical properties, both linear and nonlinear. We also focus on the unique aspects of exciton dynamics in semiconductor NCs as compared to those in bulk crystals. Various experimental techniques for probing exciton dynamics, particularly time-resolved laser methods, are reviewed. Relevant models and computational studies are also briefly presented. By comparing different materials systems, a unifying picture is proposed to account for the major dynamic features of excitons in semiconductor QDs. While the specific dynamic processes involved are material-dependent, key processes can be identified for all the materials that include electronic dephasing, intraband relaxation, trapping, and interband recombination of free and trapped charge carriers (electron and hole). Exciton dynamics play a critical role in the fundamental properties and functionalities of nanomaterials of interest for a variety of applications including optical detectors, solar energy conversion, lasers, and sensors. A better understanding of exciton dynamics in nanomaterials is thus important both fundamentally and technologically.

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Section: Optical Propertiesmentioning

confidence: 81%

Exciton Dynamics in Semiconductor Nanocrystals

2013

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“…ZnS NPs (NPs) were prepared according to the literature [13] with some modification. Briefly, stoichiometric zinc acetate dihydrate and sulfur were mixed together with oleylamine and heated to 240 °C to allow formation of ZnS NPs.…”

Section: Preparation Of Cu3sns4 and Zns Nanoparticle Inksmentioning

confidence: 99%

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

et al. 2013

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Cu2ZnSnS4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4-1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu3SnS4 and ZnS NPs and annealing in Ar/H2S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy.

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“…They can be integrated into a wide range of nanoscale devices, in particular piezotronics, photovoltaics, and photodetectors [9][10][11][12]. In addition, ZnS has also been considered as the best material to be used as an alternative buffer layer for cadmium sulfide (CdS) in CZTS solar cells [13], light-emitting diodes [14], catalysis [15], gas sensors [16], thermal sensors [17], and biosensors [18].…”

Section: Introductionmentioning

confidence: 99%

The Influence of CBD Parameters on the Energy Gap of ZnS Narcissus-Like Nanostructured Thin Films

2021

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Recently, the efficient preparation techniques of zinc sulfide (ZnS) nanostructured films have drawn great attention due to their potential applications in optoelectronics. In this study, the low-cost and high-yield chemical bath deposition (CBD) technique was used to deposit ZnS nanostructured thin films. The effect of various deposition parameters such as time, pH, precursor concentration, and temperature on the morphology and energy bandgap (Eg) of the prepared thin films were investigated. The characterization of the prepared thin films revealed the formation of polycrystalline ZnS with Narcissus-like nanostructures. Moreover, the optical characterization showed inverse proportionality between both the transmission and Eg of the nanostructured thin films and the variation of the deposition parameters. A range of different Eg values between 3.92 eV with 20% transmission and 4.06 eV with 80% transmission was obtained. Tuning the Eg values and transmission of the prepared nanostructured films by manipulating the deposition parameters of such an efficient technique could lead to applications in optoelectronics such as solar cells and detectors.

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A facile method to synthesize high-quality ZnS(Se) quantum dots for photoluminescence

Cited by 16 publications

References 35 publications

Exciton Dynamics in Semiconductor Nanocrystals

Exciton Dynamics in Semiconductor Nanocrystals

Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

The Influence of CBD Parameters on the Energy Gap of ZnS Narcissus-Like Nanostructured Thin Films

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