A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction

“…For the structural analysis of highly scaled embedded non-volatile memory (eNVM) devices, FeFETs were integrated into a 22 nm FDSOI platform using a non-invasive eNVM process [14]. Slightly larger HZO and HSO based FeFETs, which are used for analysis of material influences on the device properties, were prepared in an HKMG CMOS process replacing the dielectric HfO 2 with HSO or HZO.…”

“…For the application in highly scaled non-volatile memories, such as in 28 nm and 22 nm technology node high-k metal gate (HKMG) CMOS processes where FeFETs using ferroelectric HfO 2 thin films have already been demonstrated [13,14], the local orientation and crystallographic phase of the HfO 2 grains and the overall microstructure of the thin film are of vital importance.…”

“…In this article, we investigate Si:HfO 2 (HSO) and Hf 0.5 Zr 0.5 O 2 (HZO) films utilizing transmission Kikuchi diffraction (TKD), which allows for analyzing the microstructure as well as the local crystallographic phase and orientation of the HfO 2 film [15], X-ray diffraction (XRD), and electrical characterization. Furthermore, we use scanning transmission electron microscopy (STEM) techniques for mapping the local crystallographic phase and orientation in a HSO based FeFET fabricated in 22 nm fully-depleted silicon-on-insulator (FDSOI) [14] technology.…”

A ferroelectric semiconductor field-effect transistor

“…Thus, ferroelectric random access memory (FeRAM) has long been studied for non-volatile memory technology [2][3][4][5][6][7][8][9][10] . There are two types of FeRAM currently.…”

“…An ALD Al2O3 passivation method was developed to protect and enhance the performance of the α-In2Se3 FeS-FETs. The fabricated FeS-FETs exhibit high performance with a large memory window, a high on/off ratio over 108 , maximum oncurrent of 671 μA/μm, high electron mobility of 488 cm 2 /V•s, and the potential to exceed the existing Fe-FETs for non-volatile memory applications. This work provides a new type of transistor concept which is never considered and demonstrated for memory device applications.…”