A flexible magnetic detector based on transferred ferroelectric/ferromagnetic thin film heterostructure

Abstract

A flexible magnetic detector based on PZT/Matglas thin film heterostructure is developed by using etching and transferring technique. The transferred PZT film still exhibits (001)-oriented or very highly textured structure with good ferroelectricity(Pr = 50 μC/cm2 and Ec = 150 kV/cm). Magnetoelectric(ME) voltage coefficient of the PZT/Matglas film heterostructure approaches 5.1 V/cm Oe at resonance frequency (57.5 kHz). The flexible detector has a sensitivity of AC 0.3 nT and DC 1 Oe with high stability for magnetic field detection. Our demonstration provides a viable approach for realizing ME thin film transfer technology, which is of great significance for future applications on flexible magnetic detectors.