A Flux Controlled MOS-Based Optimized High Frequency Meminductor Emulator

R., Ananda Y.; Satyanarayan, Gadipelli Sriharsha; Trivedi, Gaurav

doi:10.1109/jetcas.2022.3221305

Cited by 5 publications

(1 citation statement)

References 39 publications

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“…These MREs has numerous important applications in signal processing circuits like oscillators, filters, programmable analog circuits, A/D and D/A convertors, neuromorphic systems, chaotic circuits [10]- [53] have been extensively dealt with. Apart from that MREs can further be converted to Meminductor and Memcapacitor elements which can result into further more applications [54]- [55]. It can be concluded from the survey of existing literature of memristors [8]- [49] that there is no MRE available in open literature which is low power, more stable and works at relatively high frequencies without using biasing and utilizes less number of active or passive elements based on only MOSFET.…”

Section: Introductionmentioning

confidence: 99%

New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications

Srivastava,

Sharma,

Gupta

et al. 2024

IEEE Access

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A new proposition of passive (no external DC bias) memristor emulator (MRE) utilizing DTMOS technique which consists of four MOSFETs and a capacitor has been presented. The proposed MRE exhibits high operating frequency (∼ 500MHz), zero static power and shows incremental behavior. The conventional mathematical equation of MRE has been derived considering the second-order effects of all the MOSFETs utilized. The proposed circuit has been simulated by the Cadence Virtuoso (IC617) spectre tool using 180 nm technology parameters. The layout occupies 1305µm 2 area. The experimental verification has been carried out utilizing ALD1116 and ALD1117 dual N-channel and P-channel MOSFET arrays to demonstrate the practical viability. Finally, different possible applications namely; analog filters, oscillators (simple and chaotic), Schmitt trigger, Amoeba learning have been realized using proposed MRE to show its neuromorphic capability. Also, new logical AND & OR and NOT circuit configurations have been designed using proposed MRE.

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