A Format of High-Density Rewritable Optical Disk using Groove Recording

Tonami, J.; Chaen, Shuichiro; Mochizuki, Masaki; Kondo, Tetsuya; Nakamura, Hideki; Nakagawa, Eiji; Ohshima, Kaori; Oki, Tsuyoshi; Hayami, Atsushi; Itonaga, Makoto

doi:10.1143/jjap.40.1639

Cited by 3 publications

(1 citation statement)

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“…The information area is separated by multiple zones in the radial direction, and each zone is divided into multiple segments in the track tangential direction, which are in a zone continuous linear velocity (ZCLV) format. 29,30) The address and other information are physically premastered by the wobbling of tracks. As the ZCLV format is applied, the phases of the adjacent wobbles are synchronized with each other in each zone.…”

Section: Structure Of Proposed Formatmentioning

confidence: 99%

New Wobble-Address Format for an Optical Disc with a Separated Guide Layer

Ogawa

Usui

Okano

et al. 2013

Jpn. J. Appl. Phys.

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A low specific on-resistance (R S,on ) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-fieldeffect-transistor) with a reduced cell pitch is proposed. The lateral MOSFET features multiple trenches: two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET). Firstly, the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si; secondly, the oxide trenches cause multiple-directional depletion, which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer. Both of them result in a high breakdown voltage (BV). Thirdly, the oxide trenches cause the drift region to be folded in the vertical direction, leading to a shortened cell pitch and a reduced R S,on . Fourthly, the trench gate extended to the BOX further reduces R S,on , owing to the electron accumulation layer. The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 µm, and R S,on decreases from 419 mΩ · cm 2 to 36.6 mΩ · cm 2 . The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.

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Section: Structure Of Proposed Formatmentioning

confidence: 99%