“…The cryo-CMOS experiences all the increases in threshold voltage, mobility, and subthreshold slope [15], [33]. With these characteristics, the functionality of CMOS circuits at 4 K has been verified in the prior works [15], [16], [17], [18], [19], [22], [23], [24], [27]. The increased mobility results in about a 30% increase in the on-current of switches, enabling a high-speed digital operation at a faster clock [15], [33].…”