Abstract:A thin ScAlN layer was deposited on high
resistivity (111) oriented silicon and two port surface acoustic wave (SAW) devices
were manufactured, using advanced nanolithographic techniques, on this
material. The Surface Acoustic Wave and Spin Wave (SAW/SW) coupling was
performed via a thin ferromagnetic layer (Ni) placed between the interdigitated
transducers (IDTs) of the SAW device. Since the phase velocity in this material
is lower than in the Si substrate, both Rayleigh (4.67 GHz) and Sezawa (8.05
GHz) propa… Show more
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