A High Isolation Series-Shunt RF MEMS Switch

Yu, Yuanwei; Zhu, Jian; Jia, Shi Xing; Shi, Yi

doi:10.3390/s90604455

Cited by 20 publications

(9 citation statements)

References 10 publications

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“…Attempts have been made to design switches for wideband operation by using series-shunt configuration [9][10][11]. The major drawback of this configuration is that it requires two different bias inputs for actuation, one for the series and the other for the shunt switch.…”

Section: Introductionmentioning

confidence: 99%

Design, fabrication and characterization of RF MEMS shunt switch for wideband operation of 3 GHz to 30 GHz

Swarnkar¹,

DasGupta²,

Nair³

2019

J. Micromech. Microeng.

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This paper presents a novel method to obtain high isolation for a wideband RF MEMS switch. The MIM shunt capacitive switch consists of two identical beams placed in parallel over floating metals of different lengths on the signal line of a CPW. With two beams in parallel, the effective resistance and inductance of the switch is lesser than a switch with only one beam. The decrease in resistance provides higher isolation at resonant frequency while the decrease in inductance provides higher isolation at frequencies beyond resonant frequency. While the increase in insertion loss due to two beams is insignificant, there is a substantial increase in isolation over a large band of frequency. A switch with two beams with isolation greater than 30 dB and insertion loss less than 0.5 dB in the range of 3 GHz to 30 GHz is demonstrated.

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Section: Introductionmentioning

confidence: 99%

Design, fabrication and characterization of RF MEMS shunt switch for wideband operation of 3 GHz to 30 GHz

Swarnkar¹,

DasGupta²,

Nair³

2019

J. Micromech. Microeng.

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“…Therefore, this article believes that focusing on major technical requirements such as "one-key sequence control" of smart grids, the multisource action of the isolation switch opening and closing positions is studied for complex operating conditions such as strong electric field, strong magnetic field, extreme high and low temperature, and harsh outdoor protection. Signal sensing technology [33] , the development and application of isolating switches with multi-source action signals, and further improving the proportion and accuracy of smart devices to replace manual labor [34,35] are the development trends of UHV isolating switches.…”

Section: Discussionmentioning

confidence: 99%

Research on UHV Isolating Switch Technology with Multi-source Action Signal

Wang

Zhang

et al. 2021

J. Phys.: Conf. Ser.

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With the improvement of the voltage level of power transmission and transformation lines, the development of smart grids has highlighted a major demand, and relevant enterprises and scientific researchers in the UHV field at home and abroad have explored the research of water intelligent isolation switch equipment. This article explains the current problems of traditional substation isolation switches, and analyzes the advantages and disadvantages of UHV isolation switch technology and its application status through three aspects: isolation switch, isolation switch contact and isolation switch sensor. Studies have shown that the development and application of isolating switches with multi-source action signals, and further improving the proportion and accuracy of smart devices to replace manual labor are the development trends of UHV isolating switches.

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“…The working of RF MEMS switch follows second‐order spring–mass–damper system [16] as shown in Fig. 4, where the mass is termed as the mass of the suspending beam.…”

Section: Step Structure Rf Mems Capacitive Switch and Its Operationmentioning

confidence: 99%

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

Kondaveeti

Guha

Rao

et al. 2019

IET Circuits, Devices & Systems

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This study reports the design and analysis of novel step structure RF micro-electromechanical system (MEMS) switch for low pull-in voltage, low insertion loss and high isolation by using uniform single meander. The central beam of the membrane is designed with 0.5 µm lower than the side beams to form a step-down structure which reduces the pull-in voltage. Stress analysis, electromechancial, switching time, quality factor and RF analysis have done to understand the behavioural characteristics of the proposed step-down switch. The analysis has been carried out for different beam and dielectric materials among them switch with gold material exhibits low pull-in voltage of 4.7 V, low insertion loss <1 dB and high isolation of −38.3 dB at 28.2 GHz for silicon nitride. The switch also shows good quality factor of 0.95 for gold material along with high capacitance ratio of 132. The upstate capacitance of 56.8 pF contributes low return loss and made the switch to transmit the signal up to 26.2 GHz and provides 7.2 pF of downstate capacitance to produce high isolation at 26.2 GHz which is efficiently used for Kband satellite applications.

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A High Isolation Series-Shunt RF MEMS Switch

Cited by 20 publications

References 10 publications

Design, fabrication and characterization of RF MEMS shunt switch for wideband operation of 3 GHz to 30 GHz

Design, fabrication and characterization of RF MEMS shunt switch for wideband operation of 3 GHz to 30 GHz

Research on UHV Isolating Switch Technology with Multi-source Action Signal

Design of a novel structure capacitive RF MEMS switch to improve performance parameters

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