A high performance DC-20 GHz SPDT switch in a low cost plastic QFN package

Xiao, Qun; Samiotes, George; Galluccio, Thomas; Rizzi, B. J.

doi:10.23919/eumc.2009.5296295

Cited by 9 publications

(3 citation statements)

References 11 publications

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“…The obtained parameters of switching transistor MICs are listed in Table 2. It can be seen that they are largely comparable to the parameters of similar switching transistors with a gate length of 0.5 µm reported in [8,9]. Thus, the results of optimization of the pHEMT heterostructure design for switching transistors were reported.…”

supporting

confidence: 76%

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Yu.

Dmitriev

Журавлев

et al. 2022

Technical Physics Letters

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The pHEMT heterostructures optimized in this work to improve the parameters of switching microwave transistors have a one-sided delta-doping at 6· 1012 cm-2 and an AlAs/GaAs spacer. Such heterostructures were used to fabricate the monolithic integrated circuits of single-pole double throw pHEMT switches with gate length and width of 0.5 μm and 100 μm, respectively. The resulting transistors had the following parameters: gmax=400 mS/mm, saturation current ID=380 mA/mm, ON-state resistance 1.0 Ω· mm, OFF-state capacitance 0.37 pF/mm. The switch parameters at 20 GHz are: insertion loss -2.2 dB, isolation -56 dB, return loss -11.7 dB, linearity P1 dB=21 dBm and IIP3=40 dBm. Keywords: Single-side doping, spacer design, maximal conductivity, pHEMT, switches.

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supporting

confidence: 76%

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Yu.

Dmitriev

Журавлев

et al. 2022

Technical Physics Letters

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“…In this work, all the pHEMT switches are designed based on pHEMTs that are exclusively operated in a common-source configuration [10][11][12]. On-wafer S-parameter measurements are carried out based on four different frequency ranges from L, S, C, and X bands using HP8510C network analyser that is connected to Cascade Microtech 9000 analytical probe station at room temperature using coaxial cables.…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…Therefore, pHEMT switches are an attractive alternative, since they offer significant design flexibility, which is wellmatched with the MMIC process, and have faster switching speed. Several studies on pHEMT switches have been conducted recently in MMIC [10][11][12]; however none of them have utilised 3D multilayer technology in the design. This paper describes for the first time the implementation of singlepole single-throw (SPST) and single-pole double-throw (SPDT) switches using pHEMTs, which are developed using 3D multilayer technology.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

Haris

Kyabaggu

Alim

et al. 2017

Semicond. Sci. Technol.

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In this paper, we demonstrate for the first time the implementation of 3-Dimensional (3D) multilayer technology on GaAsbased pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint's Own Model -Level 3 (TOM3), developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

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A wide range monolithic pHEMT SPDT switch

Menbari

Dousti

Hajghassem

2014

Micro & Optical Tech Letters

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In this study, we propose the design, fabrication, and measurement results of a −6 V single pole double throw (SPDT) switch in the frequency band of DC‐20 GHz. We use a pseudomorphic high electron mobility transistor (pHEMT) GaAs technology. This technology has a gate width of 0.15 μm and a cutoff frequency of 85 GHz. A high yield and good performance switch based on pHEMT transistor is presented for using in SPDT circuit. In this method, we can reduce the off mode capacitor of transistor (Coff) and optimize the transistor in switch mode. Therefore, this method increases the transistor isolation in “off” mode with no change in the resistance of transistor in “on” mode (Ron). Measurement results show that the insertion loss is 1 dB with variation of ±0.1 dB in the frequency bandwidth and its isolation is better than 35 dB. The linear power range of the circuit is 28 dBm. The chip size is 0.2 mm2 and very low power consumption of 25 μ w is achieved. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1454–1458, 2014

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A high performance DC-20 GHz SPDT switch in a low cost plastic QFN package

Cited by 9 publications

References 11 publications

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

A wide range monolithic pHEMT SPDT switch

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