A high-performance near-infrared photodetector based on π-SnS phase

Mahdi, Mohamed S.; Al-Arab, Husam S.; Al-Salman, Husam S.; Ibrahim, K.; Ahmed, Naser M.; Hmood, A.; Bououdina, M.

doi:10.1016/j.matlet.2020.127910

Cited by 17 publications

(2 citation statements)

References 26 publications

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“…37–40 SnS films were successfully deposited from solution on a variety of substrates including glass, silicon (Si), fluorine-doped tin oxide (FTO), and GaAs. 41–44…”

Section: Introductionmentioning

confidence: 99%

“…[37][38][39][40] SnS films were successfully deposited from solution on a variety of substrates including glass, silicon (Si), fluorine-doped tin oxide (FTO), and GaAs. [41][42][43][44] It is well-known that the physical properties of thin films and nanoparticles, and specifically their electrical, optical, structural, and magnetic properties, can strongly depend on foreign dopants. 45,46 A variety of elements were incorporated within SnS thin films and nanoparticles to control their properties, including Se, 47 In, [48][49][50] Ni, 51 Cu, 52,53 Zn, 54,55 Al, 56 Bi, 57,58 Sb, 20 Ag, 59 Cd 60 and Fe.…”

Section: Introductionmentioning

confidence: 99%

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Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Zakay

Mishra

Maman

et al. 2023

Mater. Chem. Front.

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“…37–40 SnS films were successfully deposited from solution on a variety of substrates including glass, silicon (Si), fluorine-doped tin oxide (FTO), and GaAs. 41–44…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Zakay

Mishra

Maman

et al. 2023

Mater. Chem. Front.

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Preparation and Near‐Infrared Photoelectric Properties of n‐Type Cu₃P

Peng

et al. 2022

ChemistrySelect

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As intrinsic cuprous phosphide (Cu3P) shows p‐type conductivity, the investigation of n‐type Cu3P (n‐Cu3P) was lacking and hindered its development and application. In this paper, novel n‐type conducting cuprous phosphide (n‐Cu3P) has been prepared by annealing ZnO/Cu3P/Cu structure. The morphology, composition and structure of the thin films were characterized by field emission scanning electron microscopy (FSEM), energy dispersive X‐ray spectrometer (EDX), X‐ray diffraction spectroscopy (XRD) and laser Raman spectroscopy (Raman). The semiconductor conduction type was analyzed by thermal probe method and Hall coefficient method. The transition of conduction type from p‐type to n‐type occurred as ZnO/Cu3P/Cu was annealed at 550 °C. The growth mechanism of n‐Cu3P was discussed. Finally, the infrared absorption and photoelectric properties were investigated. The near‐infrared photoelectronic performance of Cu3P was reported for the first time. The successful preparation of n‐Cu3P is helpful to promote the research and application of Cu3P based electronic devices.

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Remarkable fast-response visible light photodetectors based on SnS thin films on silicon substrates

V. P.,

Venkatesh,

Hegde

et al. 2025

Appl. Phys. A

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A high-performance near-infrared photodetector based on π-SnS phase

Cited by 17 publications

References 26 publications

Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Preparation and Near‐Infrared Photoelectric Properties of n‐Type Cu₃P

Remarkable fast-response visible light photodetectors based on SnS thin films on silicon substrates

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A high-performance near-infrared photodetector based on π-SnS phase

Cited by 17 publications

References 26 publications

Phase control in solution deposited tin monosulfide thin films: the role of Pb2+ cations

Phase control in solution deposited tin monosulfide thin films: the role of Pb2+ cations

Preparation and Near‐Infrared Photoelectric Properties of n‐Type Cu3P

Remarkable fast-response visible light photodetectors based on SnS thin films on silicon substrates

Contact Info

Product

Resources

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Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Phase control in solution deposited tin monosulfide thin films: the role of Pb²⁺ cations

Preparation and Near‐Infrared Photoelectric Properties of n‐Type Cu₃P