2018
DOI: 10.1016/j.orgel.2018.04.012
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A high T g small-molecule arylamine derivative as a doped hole-injection/transport material for stable organic light-emitting diodes

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Cited by 13 publications
(5 citation statements)
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“…At a certain section of the current density–voltage ( J – V ) curve, the J shows a lucid quadratic dependence on the V , marking the SCLC region. By fitting the SCLC region according to the Mott–Gurney law, the mobility values of CJ-03 , CJ-04 , and spiro-OMeTAD (dopant-free) are deduced to be 6.47 × 10 –5 , 9.66 × 10 –5 , and 9.79 × 10 –5 cm 2 V –1 s –1 , respectively (Figures S26–S28, Supporting Information). The hole mobility of CJ-04 performs at the same level as spiro-OMeTAD and is higher than that of CJ-03 .…”
Section: Resultsmentioning
confidence: 99%
“…At a certain section of the current density–voltage ( J – V ) curve, the J shows a lucid quadratic dependence on the V , marking the SCLC region. By fitting the SCLC region according to the Mott–Gurney law, the mobility values of CJ-03 , CJ-04 , and spiro-OMeTAD (dopant-free) are deduced to be 6.47 × 10 –5 , 9.66 × 10 –5 , and 9.79 × 10 –5 cm 2 V –1 s –1 , respectively (Figures S26–S28, Supporting Information). The hole mobility of CJ-04 performs at the same level as spiro-OMeTAD and is higher than that of CJ-03 .…”
Section: Resultsmentioning
confidence: 99%
“…While the T g for spiro-OMeTAD is reported to be higher (124 °C), crystallization from concentrated solutions at room temperature has been observed, suggesting that the T g might be lower in practice. 37 The higher T g for this set of HTMs is attributed to increased molecular weight 32,33,38 and replacement of anisole with more rigid fluorene and carbazole moieties. 37 Cyclic voltammetric analysis of each pristine HTM shows good oxidation reversibility (Figure S4).…”
mentioning
confidence: 87%
“…Xiao-Lan Huang et al reported the use of a simple small-molecule organic HIL known as N,N,N′,N′-tetra(4-methoxyphenyl)[2,2′-binaphthalene]-6,6′-diamine for OLEDs. When the material doped with F4-TCNQ, the HOMO level increased from 4.68 eV to 5.27 eV, enhancing the hole conductivity up to 2.64 × 10 −4 S m −1 compared to the neat film of 1.68 × 10 −4 S m −1 [ 18 ].…”
Section: Hole Injection Layer Materialsmentioning
confidence: 99%