A Highly Sensitive Single Crystal Perovskite–Graphene Hybrid Vertical Photodetector

Zou, Yuting; Zou, Tingting; Zhao, Chen; Wang, Bin; Xing, Jun; Yu, Zhi; Cheng, Jinluo; Wei, Xin; Yang, Jianjun; Yu, Weili; Dong, Huanli; Chen, Guo

doi:10.1002/smll.202000733

Cited by 67 publications

(57 citation statements)

References 59 publications

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“…Direct-bandgap perovskites have a long carrier lifetime by tens to hundreds of nanoseconds [108] and even up to >1 μs [5,119]. Zou et al [174] reported a vertical structure with a short electrode distance of ~2.3 μm, which enables effective charge extraction and high photoresponsivity of >1000 A W −1 at a low incident intensity of 0.66 mW cm −2 and a bias voltage of 3 V. Its photoconductive gain is approximately 2.37 × 10 3 , which is attributed to the fast charge transfer and long carrier recombination lifetime.…”

Section: Reviewsmentioning

confidence: 99%

Tunable engineering of photo- and electro-induced carrier dynamics in perovskite photoelectronic devices

et al. 2022

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The last decade has witnessed great progress in photovoltaic technology based on organometal halide perovskites because of their low nonradiative recombination loss, long carrier lifetime, and long diffusion length. The excellent optical properties and easy preparation of organometal halide perovskite-based photovoltaic products enable their wide applications in electro-optical and opto-electrical conversions. In this review, photoinduced free carriers, exciton recombination, and diffusion properties of perovskite photoelectronic devices are discussed. By controlling grain sizes and grain boundaries, suppressing defects, and conducting interfacial charge transfer, their dynamics can be controlled in a versatile manner. The generality and differences in "effective carriers" for device applications, including their electro-optical and opto-electrical conversions, are discussed. In all-optical devices, a strong light-matter interaction causes nonlinear effects, such as two-photon absorption, self-phase modulation, and optical blenching, which enable high-resolution imaging, optical modulation, and optical switching. This review provides a basis for constructing high-performance photoelectronic devices.

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Section: Reviewsmentioning

confidence: 99%

Tunable engineering of photo- and electro-induced carrier dynamics in perovskite photoelectronic devices

et al. 2022

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“…Graphene was used as the transport layer to enhance the carrier mobility of the photodetector, thus improving the photoelectric performance of the whole device, which the structure is illustrated (Figure 7c,d). [55] The study on the influence of halide element doping has also become a hot topic. Venkata et al have prepared MAPbI 3Àx Br x thin film by chemical vapor deposition method and comparing that with parent MAPbI 3 thin film, they have concluded that MAPbI 3Àx Br x samples possess better crystalline quality and photoelectric performance under the incident light of 632 nm.…”

Section: Apbx 3 (A ¼ Ma; X ¼ Br I Mixed Halides)mentioning

confidence: 99%

Recent Progress on the Performance of Lead‐Based Halide Perovskite APbX₃ Detectors

Chen

Feng

Pal

et al. 2022

Physica Status Solidi (a)

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Lead‐based halide perovskites APbX3 are likely to become competitive candidates in applications of photodetectors and X/γ‐ray detectors owing to their excellent optical and electrical characteristics, such as high and balanced carrier mobility, long carrier diffusion length, and adjustable bandgap. Based on this system, the article summarizes the performance parameters, such as responsivity, detectivity, external quantum efficiency, and response time of photodetector, and generalizes the research status of its application in near‐infrared light, visible light, and ultraviolet light photodetectors. In addition to that, it also summarizes the recent progress of X/γ‐ray detectors. What is more, the influence of radii of A‐site cations on the photoelectric performance are discussed. Finally, based on these summary and discussion, a research trend could be raised that more and more researchers tend to fabricate APbX3 perovskite with single‐crystalline thin‐film for high‐performance photodetectors in the future. It is proposed that if the A‐site ion is an organic group with a larger radius than the formamidinium (FA+), it may have better photoelectric properties than FAPbX3. Inorganic lead‐based perovskite single crystals with few defects, fast carrier mobility, and good stability are beneficial for attaining low dose rate and high‐energy resolution X/γ‐ray detectors.

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“…Photoresponse speed is another key parameter of the photodetector, which is extremely important in photoresponse communication systems. [63,64] The response speeds of the Ag 2 S-QDiP (1280)-based photodetector under both visible (532 nm) and NIR (1064 nm) band are evaluated via the time-dependent photoresponse curves. As shown in Figure S14a,c (Supporting Information), the time-dependent photoresponse curves demonstrate that the sensitivity to the incident light of both visible and NIR bands is repeatable and stable.…”

Section: Wwwadvopticalmatdementioning

confidence: 99%

Laser‐Assisted Synthesis of Ag₂S‐Quantum‐Dot‐in‐Perovskite Matrix and Its Application in Broadband Photodetectors

Zhao

Chen

Wei

et al. 2021

Advanced Optical Materials

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properties, [5][6][7][8][9][10][11][12] including large absorption coefficient (≈10 5 cm −1 ), low trap density, large carrier diffusion length (from 2.6 µm to 3 mm), high carrier mobility (≈100 cm 2 V −1 s −1 ), and small exciton binding energy (≈20 meV), enable a range of promising applications in optoelectronics and electronics, such as solar cells, [13][14][15][16] transistors, [17][18][19][20] lasers, [21][22][23][24] and light emitting diodes (LEDs). [25][26][27][28] Although great progress has been made for perovskite optoelectronics in the last decade, a deep understanding and control their underlying properties remain limited. For example, the absorption wavelength of common-used perovskites is limited to the UV-vis range. Developing an effective and facile strategy to tune its optical and electronic properties remains as a major challenge.Introducing ions, molecules, or nanoparticles into perovskites provides more possibilities to tune their optical, electrical, and even mechanical properties. For example, He et al. introduced Cs ions into perovskite, resulting in improved photoelectric conversion efficiency and increased stability. [29] Lin et al. synthesized perovskite/carbon nanotube composite crystal and achieved improved carrier mobilities. [30] Coupling perovskites with quantum dots (QDs) provides more interesting phenomena. For example, Sargent's group first developed a mixed perovskite film by introducing PbS QDs into cystalline film and a single crystal bulk, which showed promising light-emitting application in IR region. [31,32] Halide perovskites are widely explored as efficient photoresponsive materials for optoelectronic devices. However, understanding and controlling their underlying optical and electrical properties remains limited. Here, a novel approach is developed by introducing silver sulfide (Ag 2 S) quantum dots (QDs) into an MAPbBr 3 single crystal. The high-quality Ag 2 S-quantum-dot-inperovskite (Ag 2 S-QDiP) matrixes synthesized through a laser-assisted inverse temperature crystallization (LA-ITC) strategy show broadband light-sensitive wavelength from 550 to over 1000 nm, and a balanced carriers mobility facilitates their transmission and collection. A Ag 2 S-QDiP-enabled photodetector is demonstrated, which exhibits considerably enhanced responsivity and detectivity of 1.17 A W −1 and 6.24 × 10 14 Jones at 532 nm, and 57.69 mA W −1 and 1.03 × 10 11 Jones at 1064 nm, respectively. The enhanced performance in the near-infrared (NIR) region can be attributed to the discrete heterojunction formed between MAPbBr 3 and Ag 2 S QDs, which enhances the light absorption in the NIR range and facilitates photogenerated excitons' separation at the interface. The facile synthesis process, the more balanced transport behavior, and the ensuing improved device performance highlight introducing QDs into perovskite single crystal as an efficient strategy for tuning fundamental properties of perovskite and for developing high-efficiency broadband electronic and optoelectronic devices.

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A Highly Sensitive Single Crystal Perovskite–Graphene Hybrid Vertical Photodetector

Cited by 67 publications

References 59 publications

Tunable engineering of photo- and electro-induced carrier dynamics in perovskite photoelectronic devices

Tunable engineering of photo- and electro-induced carrier dynamics in perovskite photoelectronic devices

Recent Progress on the Performance of Lead‐Based Halide Perovskite APbX₃ Detectors

Laser‐Assisted Synthesis of Ag₂S‐Quantum‐Dot‐in‐Perovskite Matrix and Its Application in Broadband Photodetectors

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A Highly Sensitive Single Crystal Perovskite–Graphene Hybrid Vertical Photodetector

Cited by 67 publications

References 59 publications

Tunable engineering of photo- and electro-induced carrier dynamics in perovskite photoelectronic devices

Tunable engineering of photo- and electro-induced carrier dynamics in perovskite photoelectronic devices

Recent Progress on the Performance of Lead‐Based Halide Perovskite APbX3 Detectors

Laser‐Assisted Synthesis of Ag2S‐Quantum‐Dot‐in‐Perovskite Matrix and Its Application in Broadband Photodetectors

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Recent Progress on the Performance of Lead‐Based Halide Perovskite APbX₃ Detectors

Laser‐Assisted Synthesis of Ag₂S‐Quantum‐Dot‐in‐Perovskite Matrix and Its Application in Broadband Photodetectors