A Low Power Feedback Cutting 8T SRAM Cell for Improved Stability

Kumar, Appikatla Phani; Lorenzo, Rohit; Prajvalitha, Ulleti; Singh, Avtar

doi:10.1109/dicct56244.2023.10110163

Cited by 3 publications

References 22 publications

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Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology

Kumar,

Lorenzo

2023

Eng. Res. Express

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Many scientists are working to develop a static random-access memory (SRAM) cell that used little power and has good stability and speed. This work introduces a fin field effect transistor developed SRAM cell with 10 transistors (10T FinFET SRAM). A cross connected standard inverter and schmitt-trigger inverter is used in the proposed 10T FinFET SRAM cell. We introduce the schmitt trigger based SRAM cell with single-ended read decoupled and feedback-cutting approaches to enhance the static noise margin (SNM) and access time of the SRAM cell. The proposed cell’s power utilization is decreased with the help of stacked N-FinFETs. For determining the relative performance of the proposed 10T FinFET SRAM cell design in terms of fundamental design metrics, it has also been compared with some of the current SRAM cells, including 6T, SBL9T SRAM, 10T SRAM, and DS10T SRAM. The simulation results at 0.6V demonstrate that the suggested design achieves low power utilization when Reading, writing and hold modes of operation in comparison to the aforementioned bit cells. It maintains a high SNM during all operations. The suggested cell is the one with fastest read access. The simulation is carried out with cadence tool using FinFET 18nm technology.

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Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology

Kumar,

Lorenzo

2023

Eng. Res. Express

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A Low Power and Reduced Delay SRAM Cell for Biomedical Applications

Kumar,

Krishna,

Srilatha

et al. 2023

2023 International Conference on Data Science and Network Security (ICDSNS)

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Single-Ended Near Threshold 9T SRAM for Portable Low-Power Biomedical Applications

Kumar,

Lorenzo

2024

J CIRCUIT SYST COMP

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Biomedical applications like body area networks (BAN) necessitate the construction of power optimized SRAMs to enhance the batteries life at BAN nodes. In this work, we have designed a one-sided near-threshold 9TSRAM for low-power portable biomedical applications. The proposed near threshold 9T SRAM (PNT9T SRAM) employs a cross-connected Schmitt trigger (ST) inverter and normal inverter in its cell core. A separate path for reading is also employed to eliminate the reading disturbance. The write disturbance is removed in the PNT9T SRAM by removing the trail from VDD and ground. The write ability is improved with the use of a feedback-cutting approach. The leakage power dissipation of the memory is mitigated by using a tail transistor, virtual ground (VGND). To evaluate the performance, the PNT9T SRAM is compared with conventional 6T (C6T), ST11T, ST9T, TG9T, SBL9T, and SE9T SRAM cells using FinFET 18[Formula: see text]nm technology at 0.6[Formula: see text]V power supply. The PNT9T SRAM mitigates the read power, write power, and leakage power by 51.10%, 50.57%, and 78.97%. Furthermore, the read and write static noise margins were improved by 54% and 39.5%, respectively, compared to C6T SRAM.

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A Low Power Feedback Cutting 8T SRAM Cell for Improved Stability

Cited by 3 publications

References 22 publications

Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology

Design of highly stable, high speed and low power 10T SRAM cell in 18-nm FinFET technology

A Low Power and Reduced Delay SRAM Cell for Biomedical Applications

Single-Ended Near Threshold 9T SRAM for Portable Low-Power Biomedical Applications

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