A low-voltage highly linear OTA using bulk-driven floating gate MOSFETs

Dubey, Tanmay; Bhadauria, Vijaya

doi:10.1016/j.aeue.2018.10.034

Cited by 23 publications

(9 citation statements)

References 29 publications

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“…The authors achieve this perfor-mance boost by replacing the RFC OTA's fixed tail current by an adaptive current biasing circuit. Current Recycling/Reuse [15,26,14,17,31,32] Bulk-driven [20,28,29,33,34,36] Dynamic Threshold Voltage MOSFET (DTMOS) [30,33,34] Very Low Transconductance (VLT) [16,18,20,36] Multiple-input MOS Transistors [20,27] Non-tailed Current [21,29] Flipped Voltage Follower (FVF) [25,29] Double Gate FinFet [27] CMOS Standard Cells [24] Manuscript [26] revised the improved recycling folded cascode amplifier (IRFC). The modified circuit uses a second input pair to create three paths to conduct the small signal current into a different path of the DC current.…”

Section: A Design Techniquesmentioning

confidence: 99%

“…A Flipped Voltage Follower is also found in [29]. This work proposes an OTA using three different techniques: bulk-driven, floating gate-transistors and FVF.…”

Section: A Design Techniquesmentioning

confidence: 99%

“…The proposed BDFG-FVF OTA achieves better FoMs than the conventional FG-OTA. Like [29], the authors from [21] also propose a non-tailed with threshold-lowered differential pair OTA. The proposed circuit is designed to increase the common-mode input range of the OTA.…”

Section: A Design Techniquesmentioning

confidence: 99%

“…500 nm [15] 350 nm [21,35] 180 nm [13,14,16,18,19,22,20,24,25,26,29,31,32,33,34,36] 90 nm [17] 65 nm [23,28] 45 nm [30] 20 nm [27] The manuscripts containing MOS transistors with the narrowest channels have 45 and 20 nm of channel length. We mention that these works use the Predictive Technology Model (PTM) [38] that allows only schematic simulation, since it is not provided by a foundry.…”

Section: Technologymentioning

confidence: 99%

See 3 more Smart Citations

Are CMOS Operational Transconductance Amplifiers Old Fashioned? A Systematic Review

Braga¹,

Silva²,

Karolak³

2022

JICS

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Operational Transconductance Amplifiers (OTAs) are essential building blocks in analog circuits. Since the early years of integrated circuit science, OTAs have been used in industry and researched in academia. Over the years, a number of techniques and approaches to OTA design have been observed in the literature. With this systematic review, we aim to provide a overview of top journal papers published from 2017 to 2021 containing OTA design. In our investigation we initially found 128 manuscripts and 24 primary studies of OTA design. A set of 10 different techniques have been found. Furthermore, we also evaluate used technology, inversion level and characterization process. With this study we contribute to highlight recent OTA design innovations.

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Section: A Design Techniquesmentioning

confidence: 99%

“…A Flipped Voltage Follower is also found in [29]. This work proposes an OTA using three different techniques: bulk-driven, floating gate-transistors and FVF.…”

Section: A Design Techniquesmentioning

confidence: 99%

Section: A Design Techniquesmentioning

confidence: 99%

Section: Technologymentioning

confidence: 99%

See 2 more Smart Citations

Are CMOS Operational Transconductance Amplifiers Old Fashioned? A Systematic Review

Braga¹,

Silva²,

Karolak³

2022

JICS

View full text Add to dashboard Cite

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“…The floating-gate device is the core of almost modern non-volatile memories [20] - [21]. With regards to fabrication, the device is recognized through the use of a "floating gate".…”

Section: Floating Gate Devicementioning

confidence: 99%

Applications of TCAD Simulation Software for Fabrication and study of Process Variation Effects on Threshold Voltage in 180nm Floating-Gate Device

Cong¹,

Le-Thanh²,

Tri³

et al. 2020

Adv. sci. technol. eng. syst. j.

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In this work, a study of the process variation effects on the threshold voltage of a floatinggate device is proposed. The study demonstrates the sensitivity of the threshold voltage to five geometrical parameters including gate length, gate width, tunneling gate oxide thickness, bottom oxide-nitride-oxide oxide thickness, and nitride spacer thickness. This paper also proposed a detailed flow to fabricate the floating-gate device for CMOS 180nm process, which is used to design the floating-gate device for the study. This paper used the TCAD tools including Athena, Devedit3D, and Atlas for the simulations.

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Design of low‐voltage low‐noise operational transconductance amplifiers for low frequency applications

Sharma,

Kumar,

Madan

et al. 2024

Int J Numerical Modelling

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Low‐noise and low‐voltage operation is prime requirement of an operational transconductance amplifier for low frequency applications. However, achieving low‐noise operation at low supply voltages is a challenging task in CMOS technology owing to noise‐power and noise‐stability tradeoffs. This article outlines, the design of four differential bias self‐cascode (DBSC) operational transconductance amplifiers (OTAs) working at ±0.7 V. The four design techniques namely gate driven (GD), bulk driven (BD), bulk driven quasi‐floating gate (BDQFG), and gate driven quasi floating bulk (GDQFB) have been applied on DBSC OTAs. The designing aspects and performance parameters of these four OTAs such as gain, gain‐bandwidth, input referred noise (IRN), settling time (ST), common mode rejection ratio (CMRR), total harmonic distortion, input impedance, transconductance, power consumption, area consumption and process/mismatch variations have been fairly compared in this work. These DBSC OTAs have been designed and simulated using a standard 0.18‐μm 6M1P CMOS N‐well process. The results infer GD DBSC OTA shows high CMRR of 125.83 dB. While the BD DBSC OTA consumes very low power of 0.2 μW. The BDQFG DBSC OTA shows low 1% ST of 24.83 μS. The GDQFB DBSC OTA show high transconductance (2.35 mS), high gain (64.97 dB), and low IRN (0.40 μV/√Hz at 10 Hz). The theoretical predictions for these OTAs agree with the post‐layout simulations. The proposed OTAs can be used for designing various analog circuits such as programmable gain amplifiers, variable gain amplifiers, and transimpedance amplifiers for low‐frequency biomedical and health care applications.

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A low-voltage highly linear OTA using bulk-driven floating gate MOSFETs

Cited by 23 publications

References 29 publications

Are CMOS Operational Transconductance Amplifiers Old Fashioned? A Systematic Review

Are CMOS Operational Transconductance Amplifiers Old Fashioned? A Systematic Review

Applications of TCAD Simulation Software for Fabrication and study of Process Variation Effects on Threshold Voltage in 180nm Floating-Gate Device

Design of low‐voltage low‐noise operational transconductance amplifiers for low frequency applications

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