A memristor-based TCAM (ternary content addressable memory) cell

Junsangsri, Pilin; Lombardi, Fabrizio; Han, Jie

doi:10.1145/2770287.2770289

Cited by 18 publications

(19 citation statements)

References 14 publications

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“…In addition, memristor is a non-volatile element which can retain its state when powered off. This property can be implemented in the CAM structure to reduce the power consumption significantly by removing the power supply of CAM blocks [10]. In this paper we used the memristor model presented in [11] to simulate the proposed design.…”

Section: A Memristormentioning

confidence: 99%

“…To address those issues, recently memristor based CAM designs are presented in [13] and [10]. The circuits presented in these papers are shown in Fig.…”

Section: B Cammentioning

confidence: 99%

“…CAM are widely used in searching applications such as computer networking infrastructure for various search functions including longest prefix matching or multi-field packet classification. CAMs can be binary (each cell stores 0 or 1) or ternary (besides 0 and 1, each cell can store a third value X indicating that it is don t care value [10]. Traditional CAM is primarily used as instruction or data cache [12], while a ternary CAM (TCAM) is mostly used for specific application tasks such as longest prefix matching in network search engines.…”

Section: Introductionmentioning

confidence: 99%

“…As technology scales down these designs have issues such as relatively high leakage current particularly for nano-CMOS technology. Authors in [10] propose TCAM cell that uses memristors as storage element. It requires two memristors in series to perform the traditional memory operations (read and write) as well as the search and matching operations for TCAM.…”

Section: Introductionmentioning

confidence: 99%

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2T2M memristor based TCAM cell for low power applications

Yang¹,

Mathew²,

Ottavi

et al. 2015

2015 10th International Conference on Design &Amp; Technology of Integrated Systems in Nanoscale Era (DTIS)

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This paper presents a 2-transistors-memristors (2T2M) bitcell for content-addressable memory design suitable for low-power applications. It uses memristors to store data and MOS transistors as access devices. The low power proposed design splits the search lines to search logic 1 and logic 0 separately to reduce the search power consumption. Different word sizes of the proposed bitcells with and without low power structure are simulated, including full parasitics using BPTM, 45nm CMOS technology node to evaluate and compare different performance parameters. The proposed low power design reduces the active power dissipation of about 30% compared to the design with conventional search approach

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Section: A Memristormentioning

confidence: 99%

“…To address those issues, recently memristor based CAM designs are presented in [13] and [10]. The circuits presented in these papers are shown in Fig.…”

Section: B Cammentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

2T2M memristor based TCAM cell for low power applications

Yang¹,

Mathew²,

Ottavi

et al. 2015

2015 10th International Conference on Design &Amp; Technology of Integrated Systems in Nanoscale Era (DTIS)

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“…A ternary CAM (TCAM) is a special type of CAM that allows for storing and searching a wildcard (X) in addition to 0 and 1. Recent efforts have focused on incorporating memristors into the CAM cells [2], [6]. Compared with conventional CMOS TCAMs, memristorsbased CAMs have the potential to attain higher storage density, lower average power consumption and more importantly exceptional non-volatility.…”

Section: Introductionmentioning

confidence: 99%

Memristors-based Ternary Content Addressable Memory (mTCAM)

Liu

Shin²,

Kang³

2014

2014 IEEE International Symposium on Circuits and Systems (ISCAS)

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A memristors-based Ternary Content Addressable Memory (mTCAM) is presented. A unit mTCAM cell consists of 5T2R, five transistors and two memristors to store the ternary information, having higher storage density than conventional CMOS TCAMs together with the memristors' unique nonvolatility. In the write mode, each memristor in the cell is programmed individually such that high impedance is always present between searchlines to reduce the direct current. A twostep write scheme is proposed to reduce the write voltage compliance, and the search voltage used to drive the search content was chosen to optimize the sensing margin. Simulation results for a 2×4 mTCAM array demonstrate the functionality and feasibility of the proposed mTCAM structure, in both write and search modes.

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Toward memristive in-memory computing: principles and applications

Bao

Zhou

et al. 2022

Front. Optoelectron.

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With the rapid growth of computer science and big data, the traditional von Neumann architecture suffers the aggravating data communication costs due to the separated structure of the processing units and memories. Memristive in-memory computing paradigm is considered as a prominent candidate to address these issues, and plentiful applications have been demonstrated and verified. These applications can be broadly categorized into two major types: soft computing that can tolerant uncertain and imprecise results, and hard computing that emphasizes explicit and precise numerical results for each task, leading to different requirements on the computational accuracies and the corresponding hardware solutions. In this review, we conduct a thorough survey of the recent advances of memristive in-memory computing applications, both on the soft computing type that focuses on artificial neural networks and other machine learning algorithms, and the hard computing type that includes scientific computing and digital image processing. At the end of the review, we discuss the remaining challenges and future opportunities of memristive in-memory computing in the incoming Artificial Intelligence of Things era. Graphical Abstract

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A memristor-based TCAM (ternary content addressable memory) cell

Cited by 18 publications

References 14 publications

2T2M memristor based TCAM cell for low power applications

2T2M memristor based TCAM cell for low power applications

Memristors-based Ternary Content Addressable Memory (mTCAM)

Toward memristive in-memory computing: principles and applications

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