A memristor crossbar based on a novel ternary memristor model

Abstract

In this paper, a high-density programmable logic array based on a ternary memristor crossbar array is designed. Based on the three-valued state characteristics of the ternary memristor, we implement the ternary-OR logic gate and a standard ternary inverter to demonstrate the application of this proposed crossbar by using reconfigurable and programmable connections of the memristor cells in the array. Subsequently, on the basis of these logic gates, ternary NAND gates, NOR gates, XOR gates and XNOR gates are further realized. The above-mentioned logic gates all use memristance as the logic state variable. SPICE simulations are conducted to verify the functionality of the programmable gate array based on the proposed ternary memristor crossbar.