A MIM-cap free digitally tunable NMOS Pi-network

Thomas, Anthony; Bakalski, W.; Ussmueller, Thomas; Weigel, Robert

doi:10.1109/imarc.2013.6777725

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…3 shows a circuit diagram of the designed chip including the parameters of used components. The description of technology and examples of switch designs can be found in literature, e.g [4], [5] and [6]. The IC consists of two switches S1, S2, a 2-bit C-tuner implemented with the switches S3 and S4 as well as the voltage detectors VD1 and VD2 coupled to the RF pins.…”

Section: A Rf Switchesmentioning

confidence: 99%

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An Integrated Circuit for Decoupling and Tuning of Inverted-F Antennas in Cellular User Equipment

Oezdamar

Weigel

Hagelauer

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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An integrated circuit (IC) for decoupling of multiple-input multiple-output (MIMO) antennas as well as for aperture and impedance tuning is demonstrated in this paper. The IC decouples the adjacent stripes of the inverted-F antenna (IFA) forming the two separate IFAs for MIMO operation in middle-and high-cellular frequency bands. For low-band operation the IC joins the stripes, forming a single IFA with double the physical length. The same IC is also used for impedance and aperture tuning of the antennas. The IC is designed and fabricated in dedicated 130 nm RF switch technology. The design and measurement results are presented in the paper.

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Section: A Rf Switchesmentioning

confidence: 99%

“…Since the transistor width and the capacitor in respective switchable branch are binary-weighted, the minimum capacitance value can be expressed as follows [4], [5].…”

Section: B C-tuner and Voltage Detectormentioning

confidence: 99%

An Integrated Circuit for Decoupling and Tuning of Inverted-F Antennas in Cellular User Equipment

Oezdamar

Weigel

Hagelauer

et al. 2021

2021 IEEE International Symposium on Circuits and Systems (ISCAS)

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“…Measurement results: The prototype of a tunable directional coupler was realised in 130 nm triple-well bulk CMOS process from Infineon Technologies [3]. The chip photograph is demonstrated in Fig.…”

Section: Tunable Coupler Implementationmentioning

confidence: 99%

Tunable directional coupler for RF front‐end applications

et al. 2015

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A tunable directional coupler for radio frequency (RF) front-ends of handheld mobile devices is presented. The coupler is implemented in a 0.13 μm bulk RF-CMOS technology with all elements monolithically integrated on a single die. A digitally-tuned termination network at the isolated port of the coupler is realised solely with RF-switch transistors using the channel resistance of a metal-oxide-semiconductor (MOS) device. The fine-tuned termination network allows the coupler to achieve a directivity of over 25 dB in the whole cellular frequency range from 699 MHz up to 2.7 GHz. The worst-case insertion loss in the transmitted path is 0.15 dB at 2.7 GHz.

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