2013
DOI: 10.1149/05039.0083ecst
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A Modeling Study on the Layout Impact of With-In-Die Thickness Range for STI CMP

Abstract: Chemical Mechanical Planarization process has a proven track record as an effective method for planarizing the wafer surface at multiple points of the semiconductor manufacturing flow. One of the most challenging aspects of the CMP process, particularly in applications like Shallow Trench Isolation (STI), is the difference in relative removal rates of the different materials that are being polished. A certain amount of over-polish is required to clear oxide on top of the nitride, however, this over-polish may … Show more

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