IEEE Trans. Electron Devices
 1986
DOI: 10.1109/t-ed.1986.22739
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A modified lightly doped drain structure for VLSI MOSFET's

Sérgio Bampi
1
,
J.D. Plummer
2
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Cited by 11 publications
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References 51 publications
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Performance Analysis of Drain Pocket Hetero Gate Dielectric DG-TFET: Solution for Ambipolar Conduction and Enhanced Drive Current

Goyal
1
,
Madan
2
,
Srivastava
3
et al. 2022
Silicon
14
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4
0
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Performance Analysis of Drain Pocket Hetero Gate Dielectric DG-TFET: Solution for Ambipolar Conduction and Enhanced Drive Current

Goyal
1
,
Madan
2
,
Srivastava
3
et al. 2022
Silicon
14
0
4
0
View full textAdd to dashboardCite

Defect localization induced by hot carrier injection in short-channel MOSFETs: Concept, modeling and characterization

Cristoloveanu
1
,
Haddara
2
,
Revil
3
1993
Microelectronics Reliability
14
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3
0
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Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

Yip1,
Wong2,
Cheng3
1993
Solid-State Electronics
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