A new 4H-SiC hydrogen sensor with oxide ramp termination

Pascu, Razvan; Kusko, Mihaela; Crǎciunoiu, F.; Pristavu, Gheorghe; Brezeanu, Gheorghe; Bădilă, M.; Avramescu, Viorel

doi:10.1016/j.mssp.2015.08.019

Cited by 10 publications

(3 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although their optimal operation usually requires heating, this aspect is lower for industrial applications where the various processes that demand gas monitoring also entail elevated temperatures. For such hostile environments, silicon carbide (SiC) H 2 MOS capacitor sensors are a suitable variant [16,[20][21][22][23][24][25]. These sensors have been shown to be able to operate at high temperatures [16,20] up to 500 • C [16].…”

Section: Introductionmentioning

confidence: 99%

“…This optimal behavior is achieved with the MOS capacitor biased in the region where the capacitance is strongly dependent on applied voltage. In most prior studies [16,[20][21][22][23][24][25] these performances were measured under laboratory conditions, with the sensor small-signal C-V characteristics extracted using semiconductor parameter analyzers. In order to ensure precision, noise suppression, energy efficiency and portability requirements for sensor operation in real conditions, a readout circuit is mandatory [26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments

Enache

Draghici

Mitu

et al. 2022

Sensors

Self Cite

View full text Add to dashboard Cite

For proper operation in real industrial conditions, gas sensors require readout circuits which offer accuracy, noise robustness, energy efficiency and portability. We present an innovative, dedicated readout circuit with a phase locked loop (PLL) architecture for SiC-MOS capacitor sensors. A hydrogen detection system using this circuit is designed, simulated, implemented and tested. The PLL converts the MOS nonlinear small-signal capacitance (affected by hydrogen) into an output voltage proportional to the detected gas concentration. Thus, the MOS sensing element is part of the PLL’s voltage-controlled oscillator. This block effectively provides a small AC signal (around 70 mV at 1 MHz) for the sensor and acquires its response. The correct operation of the proposed readout circuit is validated by simulations and experiments. Hydrogen measurements are performed for concentrations up to 1600 ppm. The PLL output exhibited voltage variations close to those discernable from experimental C-V curves, acquired with a semiconductor characterization system, for all investigated MOS sensor samples.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments

Enache

Draghici

Mitu

et al. 2022

Sensors

Self Cite

View full text Add to dashboard Cite

show abstract

“…In particular, silicon carbide (SiC) has emerged as a viable alternative to replace Si in power and harsh-environment applications. SiC technology is very similar with that of Si and, in the last decade, its manufacturing processes have matured considerably, especially regarding the improvement in fabricated material defect density [ 12 , 13 , 14 , 15 , 16 , 17 , 18 ] and reliability of SiC-based devices [ 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ]. In this regard, the simplest and most technologically mature device is the Schottky diode (SBD).…”

Section: Introductionmentioning

confidence: 99%

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Pascu

Pristavu

Brezeanu

et al. 2021

Sensors

Self Cite

View full text Add to dashboard Cite

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.

show abstract

A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications

Papanasam

Chanthini

et al. 2022

Silicon

View full text Add to dashboard Cite

A new 4H-SiC hydrogen sensor with oxide ramp termination

Cited by 10 publications

References 37 publications

PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments

PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

A Comprehensive Review of Recent Progress, Prospect and Challenges of Silicon Carbide and its Applications

Contact Info

Product

Resources

About