A new and accurate circuit-modelling approach for the power-diode

Vogler, T.; Schröder, Dierk

doi:10.1109/pesc.1992.254791

Cited by 45 publications

(13 citation statements)

References 6 publications

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“…If the method of finite differences [134]- [141] is used, the derivatives in the diffusion and transport equations are expressed by differences which have the form (14) (15) The index indicates the mesh-point number. Time is also discretized and an algebraic equation system results.…”

Section: ) Finite Differencesmentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

112

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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Section: ) Finite Differencesmentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

112

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“…Other recent models (Ma and Lauritzen 1993, Liang and Gosbell 1990, Vogler and Schroder 1992, Kraus er al. 1992, Gobel er (11.…”

Section: Introductionmentioning

confidence: 99%

Simple piecewise-linear diode model for transient behaviour

Karadzinov

Jefferies

Arsov

et al. 1995

International Journal of Electronics

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Transient behaviour of a pn-junction diode can be correctly predicted by a simple piecewise-linear model comprising one linear resistor and one linear capacitor under forward bias and only a linear capacitance under reverse bias. These are selected by a voltage-controlled switch which is the only nonlinear element. Starting from solid-state analysis, an algorithm is developed for extracting values for model parameters from measurements. Simulation and experimental results confirm the accuracy of the model, the great strength of which is that it allows analytical results to be obtained for the complicated and chaotic nonlinear phenomena in series-resonant converters and other practical electronic circuits.

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“…As the diode model available in SPICE [1] is unable to predict the actual characteristics of pi-n structures, a number of new power diode models have been recently proposed including macro-modeling [2]- [4], numerical approaches [5]- [7], and detailed physical modeling [8]- [11]. These methods, however, are either based on semiempirical relations (and are hence valid only in a narrow range of operating conditions) or require heavy numerical computations or even do not include important effects, such as emitter recombination.…”

Section: Introductionmentioning

confidence: 99%

A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

Strollo

1997

IEEE Trans. Power Electron.

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A new SPICE subcircuit model for power p-in diodes is proposed in this paper. The model is based on a moment-matching approximation of the ambipolar diffusion equation. It is shown that both the quasistatic model and the lumped-charge model can be obtained as low-order momentmatching approximations while new and more accurate models can be obtained from higher-order solutions. The proposed model takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery, showing good convergence properties and fast simulation times. Comparisons between the results of the SPICE model and both numerical device simulations and experimental results are presented.

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A new and accurate circuit-modelling approach for the power-diode

Cited by 45 publications

References 6 publications

Status and trends of power semiconductor device models for circuit simulation

Status and trends of power semiconductor device models for circuit simulation

Simple piecewise-linear diode model for transient behaviour

A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

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