A New Approach to the Formation Mechanism of Tungsten Void Defect in Chemical Mechanical Polishing

Kim, Hee Jin; Egan, Bryan; Shi, Xiaoyang; Han, Ja-Hyung

doi:10.1149/2.0291811jss

Cited by 9 publications

(5 citation statements)

References 15 publications

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“…It can be reduced to a certain extent by reducing the static etch of W. 12 The W structure with small voids in the center is usually associated with the deposition technique and also due to tribo-corrosion. 152 The chances of slurry getting trapped inside the voids and accelerated etching near the void are high. Kim et al 152 described the effect of mechanical cleaning on W loss.…”

Section: Application-based Post-cmp Cleaningmentioning

confidence: 99%

“…152 The chances of slurry getting trapped inside the voids and accelerated etching near the void are high. Kim et al 152 described the effect of mechanical cleaning on W loss. Mechanical cleaning such as brush cleaning and early brush life generates more void defects in W. The void defects block electron movement and deteriorate device performance.…”

Section: Application-based Post-cmp Cleaningmentioning

confidence: 99%

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Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

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Chemical mechanical planarization (CMP), a commonly employed process for attaining local and global planarization in integrated circuits fabrication, leaves contaminants and defects on the surface polished. Due to the miniaturization of devices, new materials/ processes for the fabrication of IC circuits are considered, introducing new post-CMP issues. As such, understanding of post-CMP cleaning process is critical to choose an appropriate method for the given material. Here, the types of contaminants and defects generated during the post-CMP process and the issues related to it are discussed. The different physical and chemical cleaning methods employed in the post-CMP cleaning process to eradicate these defects are elucidated.In particular, the PVA brushing method, which is currently preferred, is elaborated upon in detail. The various chemistries, including the newly suggested ones in recent years for cleaning different substrates, are summarized. The post-CMP cleaning methods for various materials such as Cu, Al, W, Co, Ru, InGaAs, Ge, and SiO2 are mainly addressed here. This review also provides the direction of progress for the post-CMP cleaning process in terms of evolution of new techniques and chemistries for the next generation of materials.

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Section: Application-based Post-cmp Cleaningmentioning

confidence: 99%

Section: Application-based Post-cmp Cleaningmentioning

confidence: 99%

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

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“…Because of adsorption characteristics of this agent on the films, the blanket removal rates on SiO 2 and W films displayed non-Prestonian behavior at a low threshold pressure. Kim et al (2018aKim et al ( , 2018b proposed the mechanism of tungsten void formation during CMP. The defects were caused by the oxidation and friction force in the brush cleaner module.…”

Section: Chemical Mechanical Polishing For Semiconductor Devicesmentioning

confidence: 99%

“…Besides Si, SiC is a key material for the next-generation semiconductor because of its excellent properties (Wang et al, 2017;Zhou et al, 2017). CMP of tungsten has also become an important process for advanced device manufacturing of metal interconnects and transistor formation (Kim et al, 2018a); the CMP defects are issues because metal flake defects lead to electrical shorts (Kim et al, 2018c). Cobalt is also a promising material for the interconnects (Tian et al, 2018).…”

Section: Introductionmentioning

confidence: 99%

Recent advances and applications of abrasive processes for microelectronics fabrications

Zhong

2019

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Purpose This paper aims to review recent advances and applications of abrasive processes for microelectronics fabrications. Design/methodology/approach More than 80 patents and journal and conference articles published recently are reviewed. The topics covered are chemical mechanical polishing (CMP) for semiconductor devices, key/additional process conditions for CMP, and polishing and grinding for microelectronics fabrications and fan-out wafer level packages (FOWLPs). Findings Many reviewed articles reported advanced CMP for semiconductor device fabrications and innovative research studies on CMP slurry and abrasives. The surface finish, sub-surface damage and the strength of wafers are important issues. The defects on wafer surfaces induced by grinding/polishing would affect the stability of diced ultra-thin chips. Fracture strengths of wafers are dependent on the damage structure induced during dicing or grinding. Different thinning processes can reduce or enhance the fracture strength of wafers. In the FOWLP technology, grinding or CMP is conducted at several key steps. Challenges come from back-grinding and the wafer warpage. As the Si chips of the over-molded FOWLPs are very thin, wafer grinding becomes critical. The strength of the FOWLPs is significantly affected by grinding. Originality/value This paper attempts to provide an introduction to recent developments and the trends in abrasive processes for microelectronics manufacturing. With the references provided, readers may explore more deeply by reading the original articles. Original suggestions for future research work are also provided.

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“…Furthermore, PVA brushes are one of the consumables in the actual cleaning process; thus, one must know the timing after finishing the break-in process of the brush 25,26 or the brush's lifetime. 27 Adhesion force is one of the factors that affects the brush's condition.…”

mentioning

confidence: 99%

Measurement Method for Adhesion Forces between Polyvinyl Acetal Brushes and Flat Surfaces

Yamada

Mizushima

Hamada

et al. 2019

ECS J. Solid State Sci. Technol.

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The adhesion force between two materials is a key factor in surface cleaning. In this study, we developed a method for measuring adhesion forces between polyvinyl acetal (PVA) brushes and several test surfaces to understand the brushes’ adhesion characteristics. We utilized both the viscoelastic properties of PVA brushes and a high-response load cell to evaluate the adhesion forces of the compressed brushes on a flat surface. The results of the study showed that the adhesion forces increased with increased contact time and amount of compression. Some materials strongly interacted with the PVA brushes. We also observed that the measured adhesion forces were due to the existence of a skin layer on the brush surface. Moreover, we compared the adhesion forces with torques generated from rotating PVA brushes. However, the results did not correlate with the adhesion forces, which suggests that the force in the quasi-static state differs from that in the sliding condition.

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A New Approach to the Formation Mechanism of Tungsten Void Defect in Chemical Mechanical Polishing

Cited by 9 publications

References 15 publications

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Recent advances and applications of abrasive processes for microelectronics fabrications

Measurement Method for Adhesion Forces between Polyvinyl Acetal Brushes and Flat Surfaces

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