A new design approach for a high‐transimpedance and low‐noise optoelectronic integrated lightwave receiver with 24‐GHz bandwidth

Abstract

This article illustrates how the bandwidth of a high-transimpedance optoelectronic integrated circuit amplifier, involving a metalsemiconductor-metal (MSM) photodiode and heterojunction bipolar transistors (HBTs), can be improved by incorporating the concept of emitter RC-network shunt peaking often used in common-emitter voltage amplifiers. In the IC amplifier considered, the bandwidth has been shown to increase, with shunt peaking from 17.2 to 24 GHz, with no change of the equivalent input noise current (~2 . 3 PA/*), arising mainly due to the input transistor's base current and the feedback resistor. 0 1994 John Wiley & Sons, lnc. ABSTRACT A high-frequency solution is developed for the electromagnetic diffraction of an obliquely incident plane wave by a material-coated perfectly conducting half-plane. It is assumed that the coating is electrically thin so that it can be modeled by a generalized impedance boundary condition of O(t),where t is the coating's thickness. 0 I994 John Wiley & Sons, Inc.