2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2023
DOI: 10.1109/ispsd57135.2023.10147667
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A New Generation 700 V BCD Technology that Integrates Quadruple-RESURF LDMOS with Best-in-Class Specific On-Resistance

Ming Qiao
1
,
Dican Hou
2
,
Yue Gao
3
et al.
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Cited by 3 publications
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References 9 publications
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Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform

Wang,
Qiao,
Ma
et al. 2024
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform

Wang,
Qiao,
Ma
et al. 2024
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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0
0
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LDMOS of 34mΩ-cm2 On-Resistance with 700V Breakdown Voltage

Wei
2024
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Novel Bulk Homogenization Field Devices With Reducing Process Difficulty

Zhang,
Wu,
Li
et al. 2024
IEEE Electron Device Lett.
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