A new high-performance phototransistor design based on both surface texturization and graded gate doping engineering

Djeffal, F.; Ferhati, H.

doi:10.1007/s10825-015-0752-7

Cited by 26 publications

(4 citation statements)

References 19 publications

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“…10,11 Few researchers have recently reported optically controlled field effect transistor (OCFET) as a photosensor using MOSFET geometry. [11][12][13][14] These OCFET photosensors offer excellent optical performance, higher responsivity, improved light-to-dark current ratio, wider detection range, and low fabrication cost. [15][16][17] The study also reveals that a double gate MOSFET with zinc oxide (ZnO) as a gate catalyst can offer ten times better sensitivity in terms of light detection than bulk MOSFET.…”

mentioning

confidence: 99%

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Panda¹,

Dash²

2022

ECS J. Solid State Sci. Technol.

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We investigated the effectiveness of a single gate SiGe/Si heterostructure tunnel field-effect transistor (TFET) as a photosensor in the visible spectrum. A transparent zinc oxide (ZnO) layer is used as the optical region over the channel for sensing the incident light. When light impinges on the gate catalyst and creates optical charge carriers in the illumination region, the conductance of the device considerably rises and, consequently, the subthreshold current changes. For the suggested photosensor, the effect of varying drain-to-source voltage, germanium mole fraction (x), and silicon film thickness (tsi) on the sensor performance are investigated. The sensor offers enhanced sensitivity performance as compared to the traditional TFET in terms of several optical figures of merit such as available photocurrent, responsivity, quantum efficiency, sensitivity, and SNR, and can therefore be utilized as an efficient photosensor. The reported sensor has a peak responsivity (R) of 2.23 A/W and quantum efficiency (η) of 7.31 at a wavelength (λ) of 450 nm.

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mentioning

confidence: 99%

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Panda¹,

Dash²

2022

ECS J. Solid State Sci. Technol.

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“…Photons can be employed to process data in the same manner as electrons. [136,137] For processing optical information, fiber-optic multiplexing allowed concurrent data flow over a single channel, thus, significantly speeding data processing. [138][139][140] Pereira and co-workers exploited multi-beam fiber multiplexing.…”

Section: Bio-optical Multi-valued Logic Systemmentioning

confidence: 99%

Tunable and responsive photonic bio‐inspired materials and their applications

Jeon,

Bukharina,

Kim

et al. 2024

Responsive Materials

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Bio‐enabled and bio‐mimetic nanomaterials represent functional materials, which use bio‐derived materials and synthetic components to bring the better of two, natural and synthetic, worlds. Prospective broad applications are flexibility and mechanical strength of lightweight structures, adaptive photonic functions and chiroptical activity, ambient processing and sustainability, and potential scalability along with broad sensing/communication abilities. Here, we summarize recent results on relevant functional photonic materials with responsive behavior under mechanical stresses, magnetic field, and changing chemical environment. We focus on recent achievements and trends in tuning optical materials' properties such as light scattering, absorption and reflection, light emission, structural colors, optical birefringence, linear and circular polarization for prospective applications in biosensing, optical communication, optical encoding, fast actuation, biomedical fields, and tunable optical appearance.

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“…In this perspective, the PSO-based metaheuristic technique can be applied to optimize the optical performance of the proposed a-Si/Ti multilayer absorber [25]. This technique is extensively employed to perform effective predictive simulations, which allow optimizing and outperforming various nanoelectronic and optoelectronic devices [26][27][28]. The main objective of our investigation consists of a strategic combination between PSO approach and an accurate numerical analysis to identify the best geometry associated with the investigated Si/Ti multilayer structure that could enable achieving the highest TAE, while maintaining enhanced antireflection capabilities.…”

Section: Device Design and Optimizationmentioning

confidence: 99%

Absorption enhancement in amorphous Si by introducing RF sputtered Ti intermediate layers for photovoltaic applications

Ferhati

Djeffal

Boubiche

et al. 2021

Materials Science and Engineering: B

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In this paper, embedded Amorphous-Silicon (a-Si) and Titanium (Ti) ultrathin-films forming a multilayer structure is proposed as a new efficient absorber material for thin-film solar cells (TFSCs). Promising design strategy based on combining FDTD (Finite Difference Time Domain) with Particle Swarm Optimization (PSO) was adopted to identify the a-Si/Ti multilayer geometry offering the highest Total Absorbance Efficiency (TAE). It is found that the optimized design can serve as an effective absorber, yielding superb TAE exceeding 80%.The optimized a-Si/Ti multilayer was then elaborated by successive growth of a-Si and Ti ultrathin layers using RF magnetron sputtering technique. The sputtered a-Si/Ti thin-film was characterized by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), and UV-Visible absorption spectroscopy. Measurements showed a unique optical behavior, promoting broadband absorbance over the visible and even NIR spectrum ranges. In particular, the prepared a-Si/Ti absorber exhibits an optical band-gap of 1.36 eV, which is suitable for photovoltaic applications. A performance assessment of the elaborated absorber was investigated by extracting I-V characteristics and electrical parameters under dark and 1-sun illumination. It is revealed that the proposed absorber demonstrates outstanding electrical and sensing performances. Therefore, promoting enhanced resistive behavior and light-scattering effects, this innovative concept of optimized a-Si/Ti multilayer provides a sound pathway for designing promising alternative absorbers for the future development of a-Si-based TFSCs.

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A new high-performance phototransistor design based on both surface texturization and graded gate doping engineering

Cited by 26 publications

References 19 publications

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Implementing a Single Gate Heterostructure Tunnel FET as a Low-Power Photosensor with Improved Sensitivity

Tunable and responsive photonic bio‐inspired materials and their applications

Absorption enhancement in amorphous Si by introducing RF sputtered Ti intermediate layers for photovoltaic applications

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