A New Method to Correlate Human Body Model and Transmission Line Pulse Based on <i>RC</i> Thermal Equivalent Model

Wang, Yi–Ze; Wang, Yuan

doi:10.1109/ted.2020.3009049

Cited by 6 publications

(4 citation statements)

References 21 publications

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“…Transmission line pulse (TLP) systems [40][41][42] are generally used to measure the high-voltage and high-current snapback behavior of a test device. This TLP system uses…”

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

“…Transmission line pulse (TLP) systems [40][41][42] are generally used to measure the high-voltage and high-current snapback behavior of a test device. This TLP system uses LabVIEW software to control and match the peripheral electronic instruments such as ESD pulse generators, high-frequency digital oscilloscopes, and digital power meters, thus enabling automated measurement mechanisms.…”

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

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ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Hong

Chen

2021

Electronics

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Electrostatic discharge (ESD) events can severely damage miniature components. Therefore, ESD protection is critical in integrated circuits. In this study, drain-electrode-embedded horizontal Schottky diode contact modulation and Schottky length reduction modulation were performed on a high-voltage 60-V n-channel laterally diffused metal-oxide–semiconductor transistor (nLDMOS) element. The effect of the on-voltage characteristics of cascade Schottky diodes on ESD protection was investigated. By using a transmission-line pulse tester, the trigger voltage, holding voltage, and secondary breakdown current (It2) of the nLDMOS element were determined using the I–V characteristic. As the N+ area was gradually replaced by the parasitic Schottky area at the drain electrode, an equivalent circuit of series Schottky diodes formed, which increased the on-resistance. The larger the Schottky area was the higher the It2 value was. This characteristic can considerably improve the ESD immunity of nLDMOS components (highest improvement of 104%). This is a good strategy for improving ESD reliability without increasing the production steps and fabrication cost.

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“…Transmission line pulse (TLP) systems [40][41][42] are generally used to measure the high-voltage and high-current snapback behavior of a test device. This TLP system uses…”

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

Section: Test Methods and Test Instrumentmentioning

confidence: 99%

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Hong

Chen

2021

Electronics

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“…The HBM consists of an equivalent human body capacitance and discharge resistance of 100 pF and 1.5 kΩ, respectively. [47] When the charged human body contacts with another object, it will produce an instantaneous discharge current in the current level of up to several amperes and rise-time of hundreds of ns. Without an adequate robustness, the large ESD current generated at the moment of discharge is sufficient to damage the TFT.…”

Section: Characterization Of Tft Under Esd Stressmentioning

confidence: 99%

“…In addition, the ESD stresses will be limited to the ESD benchmark HBM. [47,48] The HBM compliance is a mandate of almost all IC's used in the commercial, military, and aerospace applications.…”

Section: Introductionmentioning

confidence: 99%

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Yan

Lan

Chen

et al. 2021

Adv Elect Materials

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Electrostatic discharge (ESD) is one of the most prevalent threats to the reliability of electronic components, which can result in a very high current passing through the device or microchip within a very short period of time, and cause serious irreversible damage. Thin film transistors (TFTs) are widely used in flat panel display, sensor, memristor, radio frequency identification, and other fields. But unlike the CMOS technology, TFTs can be fabricated in several various processes including amorphous Si, polycrystalline Si, metal oxide, organics, etc. As such, TFTs are prone to different types of reliability issues, and a unified overview on the subject would be beneficial to the electron devices community. The topic of the reliability issues of TFTs in different processes subject to ESD stresses has gained increasing attentions, but the reports and results are scattered. In the review, the existing articles on this topic are summarized. The characterization of TFTs under ESD stress is introduced and the failure mechanisms of various semiconductor based TFTs are compared and analyzed. Optimization methods to improve ESD robustness are presented. Finally, a conclusion and a perspective in the field of research on ESD reliability of TFTs are summarized.

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Characteristic parameter model and circuit‐level simulation of gate‐controlled dual direction SCR for on‐chip ESD protection

Liu,

Wang,

Yang

et al. 2024

Circuit Theory & Apps

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SummaryDual‐directional SCR (DDSCR) with bidirectional discharge paths and high robustness is widely employed for electrostatic discharge (ESD) protection in integrated circuits. However, the design and simulation of on‐chip ESD protection circuits for dual‐directional paths remain challenging due to a lack of relevant device models. This paper designs a Gate‐Controlled Dual‐Direction SCR (GDDSCR) for providing electrostatic discharge (ESD) protection in industry‐level temperature sensors. Furthermore, a new behavioral model is developed based on the GDDSCR for simulating ESD protection circuits along both forward and reverse paths. Experimental results demonstrate that the GDDSCR behavioral model accurately reproduces the IV characteristics observed in bidirectional transmission line pulse (TLP) tests. In addition, the equivalent circuit based on human body model (HBM) is used for transient simulation, and the accuracy of the model is verified by relevant HBM experiments. The proposed model allows the direct extraction of parameters such as trigger voltage (Vt1), holding voltage (Vh), and on‐state resistance (Ron) through TLP testing, facilitating easy application to other types of DDSCR devices.

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A New Method to Correlate Human Body Model and Transmission Line Pulse Based on RC Thermal Equivalent Model

Cited by 6 publications

References 21 publications

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs

Reliability Issues of Thin Film Transistors Subject to Electrostatic Discharge Stresses: An Overview

Characteristic parameter model and circuit‐level simulation of gate‐controlled dual direction SCR for on‐chip ESD protection

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