A New Method to Supply Solute Elements into Growth Solutions: Demonstration by Liquid‐Phase Epitaxial Growth of

Abstract

A controllable method to supply solute elements into growth solutions was developed by using a source currentcontrolled (SCC) method. A dc electric current was passed through a binary semiconductor compound used as the source material for solute elements. It was found that the source compound could be dissolved into even a saturated solution due to Peltier heating and Joule heating at the interface between the source compound and the solution, and that the composition of growing crystals could be controlled by the electric current passed through the source compound. The SCC method was demonstrated by the liquid-phase epitaxial growth of In,_~Ga~As on YnP. GaAs and InAs were used as source compounds.Good quality ePitaxial layers such as In0..~:~Ga0.47As and