A New Physics Effect, Phonon-Energy-Coupling Enhancement, and Its Applications for Leakage Current Reduction of Gate Dielectrics

Abstract

Since discovery of the phonon-energy coupling enhancement (PECE) effect, significant progress has been made in understanding of this new physics effect. Extensive evidence showed that all chemical bonds in SiO 2 /Si, including Si-D, Si-O, and Si-Si bonds are strengthened due to the PECE effect. To our great surprise, the quantum tunneling current of SiO 2 is also reduced by 2-5 orders of magnitude. The key factors for generation of the PECE effect are the structure change at high temperature and repairing of defects by trace O 2 . There is a strong correlation between the leakage current reduction of high-k HfSiON and concentration of Si-O bonds suggesting that it is the PECE effect that causes the leakage current reduction of high-k oxides.