A New Wide Bandgap Semiconductor: Carbyne Nanocrystals

Abstract

Deep ultraviolet (DUV) photodetectors (PDs) always and inevitably face a drastic working environment such as high temperature. However, DUV PDs based on the reported wide bandgap semiconductor materials cannot simultaneously possess high stability and high performance at high temperatures. Here, for the first time, a new wide bandgap semiconductor material, carbyne nanocrystals (CNCs), is reported. The constructed DUV PD made from CNCs demonstrates high‐performance and high stability at the temperature of 300 °C, which is the highest working temperature reported to date for DUV PDs. Under 266 nm light at room temperature, the CNCs‐based PD exhibits a low dark current of less than 10 pA and a high signal‐to‐noise ratio of greater than 106 at a bias voltage of 2 V. It can work at the temperature up to 300 °C, exhibiting a current on‐off ratio of 2.1, and accompanied by a fast response/recovery speed of less than 0.06 s. The excellent transport properties of CNCs would be of great benefit to enhance the performance of devices. These findings open the door to the applications of CNCs as a new wide bandgap semiconductor material.

Hybrid 2D/3D Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

“…The stable angular detection ability under high temperatures demonstrates that the PSD is significant potential for applications in severe working conditions such as those of astronomy, flame detection, and engine monitoring. [67,68]…”

H/F-Substitution-Induced Confinement Effect for Designing High-Phase-Transition-Temperature Organic–Inorganic Hybrid Materials

“…The electronic structure of a solid can determine its basic properties, such as electrical properties, thermal properties, magnetic properties, and so on. In order to deeply explore the relationship between the internal electronic structures and energy bands of compounds 1 and 2 , we study their band structures. − The band structures of compounds 1 and 2 were then investigated. When the conduction band minimum is at the same position as the valence band maximum, it is a direct band gap semiconductor; otherwise, it is an indirect band gap semiconductor. , As shown in Figure e,f, both compounds 1 and 2 are indirect band gap semiconductors.…”

The kinked structure and interchain van der Waals interaction of carbyne nanocrystals

“…9 Recently, Pan et al reported the first synthesis of carbyne nanocrystals by laser ablation in liquids (LAL). 10 Since then, a large number of studies on carbyne nanocrystals have emerged, [11][12][13] which implies that a new era of carbyne science and technology is coming. 8 Note that Babaev and Cuseva prepared a solid carbon film by pulsed plasma deposition of carbon clusters generated by a vacuum arc, and they called this solid film to be "linear-chained carbon (LCC)" because they believed that an energetic ion beam can destroy the sp 2 or sp 3 hybrid structures of carbon and make them into sp hybrids.…”