A Novel Design Approach for Multi-input XOR Gate Using Multi-input Majority Function

Alkaldy, Esam; Navi, Keivan; Sharifi, Fazel

doi:10.1007/s13369-014-1387-x

Cited by 8 publications

(5 citation statements)

References 21 publications

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“…The diameter of the CNT is calculated using Eq. (2) (Alkaldy, Navi, & Sharifi, 2014;Bagherizadeh & Eshghi, 2011a, 2011bMehrabani & Eshghi, 2015).…”

Section: Carbon Nanotube Field Effect Transistors (Cnfets)mentioning

confidence: 99%

“…(3). A special threshold voltage of a CNFET could be obtained by a suitable diameter (Alkaldy et al, 2014).…”

Section: Carbon Nanotube Field Effect Transistors (Cnfets)mentioning

confidence: 99%

“…where parameter a (≈0.249 nm) is the carbon-to-carbon atom distance, V π ( ∼ =3.033 eV) is the carbon π-π bond energy in the tight bonding model, and e is the unit electron charge, E g is the band gap, and D CNT is the CNT diameter. There are three kinds of CNFET: The first kind is the MOSFET-like CNFET (which contains the p-type CNFET and n-type CNFET), which operates in a unipolar mode; the second kind is the Schottky barrier (SB) CNFET, which shows ambipolar characteristics, but because of the SB element, it is not appropriate for high performance applications; the third kind of CNFET, suitable for low power applications, is the band-toband tunneling CNFET that has obviously low current in its active mode (Alkaldy et al, 2014). CNFETs.…”

Section: Carbon Nanotube Field Effect Transistors (Cnfets)mentioning

confidence: 99%

See 2 more Smart Citations

Digital counter cell design using carbon nanotube FETs

Bagherizadeh

Moaiyeri

Eshghi

2017

Journal of Applied Research and Technology

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Compressor and counter cells are the basic blocks used to accumulate the partial products in a multiplication process. In this paper, novel high speed and low power carbon nanotube counter cells are suggested. The efficiency of circuits is improved by using carbon nanotube field-effect transistors (CNFETs). The proposed designs are 4-to-3, 5-to-3, 6-to-3, and 7-to-3 counters. Using HSPICE, these proposed designs are simulated at different conditions. Simulation results confirm that the proposed designs are the fastest counters with lowest PDP in different working circumstance.

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“…The diameter of the CNT is calculated using Eq. (2) (Alkaldy, Navi, & Sharifi, 2014;Bagherizadeh & Eshghi, 2011a, 2011bMehrabani & Eshghi, 2015).…”

Section: Carbon Nanotube Field Effect Transistors (Cnfets)mentioning

confidence: 99%

“…(3). A special threshold voltage of a CNFET could be obtained by a suitable diameter (Alkaldy et al, 2014).…”

Section: Carbon Nanotube Field Effect Transistors (Cnfets)mentioning

confidence: 99%

Section: Carbon Nanotube Field Effect Transistors (Cnfets)mentioning

confidence: 99%

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Digital counter cell design using carbon nanotube FETs

Bagherizadeh

Moaiyeri

Eshghi

2017

Journal of Applied Research and Technology

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“…The limitations in CMOS technology such as high lithography, short channel effects, and power consumption encouraged scientists to think about alternatives. Many nanotechnologies were emerged to overcomes these limitations such as Single Electron Transistor [1,2], Carbon Nanotube Field-Effect Transistor [3][4][5][6][7], FinFET [8][9][10] and Quantum-dot Cellular Automata (QCA). QCA technology was introduced for the first time by Lent et al in 1993 [11] and it is reliability was studied in [12].…”

Section: Introductionmentioning

confidence: 99%

Novel Memory Structures in QCA Nano Technology

Majeed

Alkaldy²,

Zainal³

et al. 2020

IJEEE

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Quantum-dot Cellular Automata (QCA) is a new emerging technology for designing electronic circuits in nanoscale. QCA technology comes to overcome the CMOS limitation and to be a good alternative as it can work in ultra-high-speed. QCA brought researchers attention due to many features such as low power consumption, small feature size in addition to high frequency. Designing circuits in QCA technology with minimum costs such as cells count and the area is very important. This paper presents novel structures of D-latch and D-Flip Flop with the lower area and cell count. The proposed Flip-Flop has SET and RESET ability. The proposed latch and Flip-Flop have lower complexity compared with counterparts in terms of cell counts by 32% and 26% respectively. The proposed circuits are designed and simulated in QCADesigner software.

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“…The failure of keeping integrated circuits (ICs) fabrication process obeying Moore’s law in device integration prompted scientists to think about an alternative technology in the next generation of ICs. Some of these technologies are: Fin field-effect transistor (Hisamoto et al , 2000; Xuejue et al , 2001; Sabetzadeh et al , 2019), carbon nanotube field-effect transistor (Reshadinezhad et al , 2012; Ebrahimi and Keshavarzian, 2013; Safaei Mehrabani and Eshghi, 2016; Alkaldy et al , 2014; Alkaldy et al , 2014), single electron transistor (SET) (Khan, 2015; Tannu and Sharma, 2012) and quantum-dot cellular automata (QCA). QCA technology can be considered as competition among them because it has no current flow and uses a unique paradigm for digital representation and transferring data besides other merits available in the other technologies (Ebrahimi and Reshadinezhad, 2015).…”

Section: Introductionmentioning

confidence: 99%

Optimal design of RAM cell using novel 2:1 multiplexer in QCA technology

Majeed

Alkaldy

Zainal

et al. 2019

Self Cite

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Purpose Quantum-dot cellular automata (QCA) has attracted computer scientists as new emerging nanotechnology for replacement the current CMOS technology because it has unique characteristics such as high frequency, extremely small feature size and low power consumption. The main building blocks in QCA are the majority gate and inverter so any Boolean function can be represented using these gates. Many important circuits were the target for implemented in this technology in an optimal form, such as random-access memory (RAM) cell. QCA-RAM cells were introduced in literature with different forms but most of them are not optimized enough. This paper aims to demonstrate QCA inherent capabilities that can facilitate the design of many important gates such as the XOR gate and multiplexer (MUX) without following any Boolean function to get an optimum design in terms of complexity and delay. Design/methodology/approach In this paper, a novel structure of QCA-MUX in an optimal form will be used to design two unique structures of a RAM cell. The proposed RAM cells are the lowest cost required compared with different counterparts. The presented RAM cells used a new approach that follows the new suggested block diagram. The presented circuits are simulated and tested with QCADesigner and QCAPro tools. Findings The comparison of the proposed circuits with the previously reported in the literature show noticeable improvements in speed, area, and the number of cells. The cost function analysis results for the proposed RAM cells show significant improvement compared to older circuits. Originality/value A novel structure of QCA-MUX in an optimal form will be used to design two unique structures of a RAM cell.

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A Novel Design Approach for Multi-input XOR Gate Using Multi-input Majority Function

Cited by 8 publications

References 21 publications

Digital counter cell design using carbon nanotube FETs

Digital counter cell design using carbon nanotube FETs

Novel Memory Structures in QCA Nano Technology

Optimal design of RAM cell using novel 2:1 multiplexer in QCA technology

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