A Novel DRAM Cell Transistor Featuring a Partially-insulated Bulk FinFET (Pi-FinFET) with a pad-Polysilicon Side Contacts (PSC)

Han, Sangyong; Park, J.M.; Sohn, Si-Ok; Lee, J.B.; Chae, Kwon Seok; Jeon, Changwoo; Park, J.S.; Kim, S.D.; Kim, W.J.; Yamada, S.; Kim, Y.P.; Park, H.S.; Cho, N.M.; Kim, H.H.; Lee, M.S.; Lee, Y.S.; Yang, Wonyoung; Park, Donggun; Ryu, Byung-Il

doi:10.1109/vlsit.2007.4339768

2007 IEEE Symposium on VLSI Technology 2007

DOI: 10.1109/vlsit.2007.4339768

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A Novel DRAM Cell Transistor Featuring a Partially-insulated Bulk FinFET (Pi-FinFET) with a pad-Polysilicon Side Contacts (PSC)

Sangyong Han

J.M. Park

Si-Ok Sohn

et al.

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A Novel DRAM Cell Transistor Featuring a Partially-insulated Bulk FinFET (Pi-FinFET) with a pad-Polysilicon Side Contacts (PSC)

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References 1 publication

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