A Novel Fast Recovery Diode with Lower Emitter Efficiency

Abstract

In this paper, a new structure of Fast Recovery Diode (FRD) and its manufacture methods were investigated. The active region designed by TCAD simulation software could achieve low emitter injection efficiency, and then reduce the peak reverse recovery current, improve the reverse recovery softness and increase working stability. Meanwhile, the effect of the P-body dose and carrier lifetime on the turn-off characteristic of FRD was also discussed. Taking an example of 3300V voltage grade devices for FRD, the reasonable P-body dose and carrier lifetime on the basis of the new structure were confirmed by simulations. This diode was suitable for the anti-parallel with power switch device (such as IGBT, GTO, etc.).