A Novel Floating Memristor Emulator with Minimal Components

Abstract

A new floating emulator for the flux-controlled memristor is introduced in this paper. The proposed emulator circuit is very simple and consists of only two current feedback operational amplifiers (CFOAs), two analog multipliers, three resistors, and two capacitors. The emulator can be configured as an incremental or decremental type memristor by using an additional switch. The mathematical model of the emulator is derived to characterize its behavior. The hysteresis behavior of the emulator is discussed in detail, showing that the pinched hysteresis loops in V-plane depend not only on the amplitude-to-frequency ratio of the exciting signal but also on the time constant of the emulator circuit itself. Experimental tests are provided to validate the emulator's workability.

Floating memristor and inverse memristor emulation configurations with electronic/resistance controllability

“…Using the various mathematical models developed for the current–voltage relationship of an ideal memristor, the several circuit emulators to realise the memristor behaviour based on modern active elements have been reported by researchers in the last decade. Some of the popular floating memristor emulators have been described in [10–22].…”

“…In [21], a floating memristor emulation circuit is reported, although it uses single CCTA but also employs three passive resistances along with a grounded capacitance. Furthermore, the floating memristor configuration developed in [22] employs two AD844 ICs and two AD633s. Along with the use of a large number of active elements the circuit also requires four grounded capacitances, two grounded resistances and five floating resistances.…”

“…In addition to design aspects, the performance of circuits reported in [10–22] is also studied. On careful investigation of transient VI characteristics of the memristor emulator reported in [10], it can be observed that the presented emulation circuit exhibits poor frequency dependency, i.e.…”

“…In the case of the emulator presented in [21], the change in the lobe area with respect to frequency is not as per the requirement of an ideal memristor. In [22], the hysteresis curve is present only up to the frequency of the order of several hundreds of Hzs, and also, the frequency dependency and non‐volatility check have not been performed as can be observed in the presented simulation results.…”

“…As compared to the emulators reported in [10–22], the proposed memristor configuration has the following advantageous features: (i) Employment of single ABB. (ii) Only two passive elements are employed. (iii) All the employed passive elements are grounded. (iv) No use of external voltage multiplier circuit/IC. (v) Memristor behaviour tunability through employed passive elements and biasing currents. (vi) No requirements for the matched value of passive elements. (vii) Wide operating frequency range (order of MHz). (viii) Lobes are perfectly symmetrical. (ix) Satisfactory G M response for pulse excitation. (x) Lobe area shows ideal frequency dependency as desired in case of memristor. The use of single ABB, employment of only two grounded passive components and no use of voltage multiplier are the features which confirm the compactness of proposed memristor emulators. Avoiding large‐sized electronic circuits and elements is always followed by IC designers and developers.…”