A Novel Low-Bias Charge Concept for HBT/BJT Models Including Heterobandgap and Temperature Effects—Part II: Implementation, Parameter Extraction and Verification

Correlated noise in bipolar transistors: Model implementation issues

“…The DC and RF parameter extraction methods from the measured data and the detailed modeling results using HICUM/L2v2.24G [40] are presented in [41]. The high level of model accuracy against the measured data in [41] provides the basis for further analysis of the different noise models discussed in this work. Note that the same process was selected in [10] for their model verification with the exception that l E ¼ 10 lm in [10].…”

“…All noise model variants discussed in this work are implemented in the Verilog-A model HICUM/L2v2.24G [40]. The model card obtained in [41] is used in the subsequent investigations presented here. Following [10], the NQS parameters are fixed at a qf ¼ 0:34 and a it ¼ 0:68 if not mentioned otherwise.…”

Automated model complexity reduction using the HICUM hierarchy

“…The original parameters for the transfer current and transit times were extracted as described in [10,11]. Parameters for the resistances and the experimental results were taken from [14].…”