A novel method of analytically extracting model parameters for stacked transformers

Abstract

Summary An accurate compact model for stacked transformers is proposed. The parasitics between the primary metal coils and the substrate are taken into consideration. The model parameters can be analytically extracted from open‐loaded S‐parameters measured from two‐port test structures. The modeling methodology renders excellent agreement with the data from both simulation and measurement over the frequency range of 0.1–20 GHz for a monolithic stacked transformer manufactured in 0.18‐µm Radio frequency Complementary Metal Oxide Semiconductor (RF CMOS) technology. Copyright © 2015 John Wiley & Sons, Ltd.

A spiral planar inductor: An experimentally verified physically based model for frequency and time domains

“…[1][2][3] From a design point of view, planar inductor electrical behavior cannot be precisely predicted by the conventional inductor models. [4][5][6] In particular, the skin, the proximity, and the parasitic capacitances effects are complex devices to model, particularly during large frequency domain. In the work of Han et al, 5 the electromagnetic simulation is considered to be modeling planar components.…”

“…However, this method is not only cumbersome and time‐consuming but also difficult to develop into general electronically circuit simulations. Other original models are reported by Wang et al However, this model is not dependent on the geometrical parameters and the layout process. Moreover, its model parameters are not used fairly to optimize the planar inductor layout.…”