A Novel Method of Synthesizing Graphene for Electronic Device Applications

Galvão, Nierlly Karinni de Almeida Maribondo; Vasconcelos, Getúlio de; Pessoa, Rodrigo Sávio; Machado, João Paulo Barros; Guerino, Marciel; Fraga, Mariana Amorim; Rodrigues, Bruno V. M.; Camus, J.; Djouadi, A.; Maciel, Homero Santiago

doi:10.3390/ma11071120

Cited by 6 publications

(5 citation statements)

References 42 publications

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“…Usually, the adhesion of a film on a substrate may be improved if one of these treatments is performed. The use of interlayers can improve the film’s adhesion due to reduced thermal stress between SiC and Si materials [ 38 ].…”

Section: Resultsmentioning

confidence: 99%

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Tiron

Ursu²,

Cristea

et al. 2022

Nanomaterials

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Due to an attractive combination of chemical and physical properties, silicon carbide (SiC) thin films are excellent candidates for coatings to be used in harsh environment applications or as protective coatings in heat exchanger applications. This work reports the deposition of near-stoichiometric and nanocrystalline SiC thin films, at room temperature, on silicon (100) substrates using a DCMS/HiPIMS co-sputtering technique (DCMS—direct current magnetron sputtering; HiPIMS—high-power impulse magnetron sputtering). Their structural and mechanical properties were analyzed as a function of the process gas pressure. The correlation between the films’ microstructure and their mechanical properties was thoroughly investigated. The microstructure and morphology of these films were examined by appropriate microscopic and spectroscopic methods: atomic force microscopy (AFM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and Raman spectroscopy, while their mechanical and tribological properties were evaluated by instrumented indentation and micro-scratch techniques. The lowest value of the working gas pressure resulted in SiC films of high crystallinity, as well as in an improvement in their mechanical performances. Both hardness (H) and Young’s modulus (E) values were observed to be significantly influenced by the sputtering gas pressure. Decreasing the gas pressure from 2.0 to 0.5 Pa led to an increase in H and E values from 8.2 to 20.7 GPa and from 106.3 to 240.0 GPa, respectively. Both the H/E ratio and critical adhesion load values follow the same trend and increase from 0.077 to 0.086 and from 1.55 to 3.85 N, respectively.

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Section: Resultsmentioning

confidence: 99%

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Tiron

Ursu²,

Cristea

et al. 2022

Nanomaterials

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“…In fact, the greater the target–substrate distance in processes performed by magnetron sputtering, the better the uniformity of the film formed, where a distance of 60 mm was used. With regard to the film morphology, in previous work [44] Atomic force microscopy (AFM) analyses of the SiC/AlN/Si film and the AlN/Si film were performed, showing films with rough surfaces and with grain sizes smaller than 100 nm.…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, we recently proposed the thermal decomposition of SiC thin films using a CO 2 laser beam without a vacuum chamber for graphene synthesis. The use of an AlN layer proved to be important because it reduces the thermal stress between SiC and Si materials [44]. Other applications will be the subject of further work.…”

Section: Discussionmentioning

confidence: 99%

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

et al. 2019

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Many strategies have been developed for the synthesis of silicon carbide (SiC) thin films on silicon (Si) substrates by plasma-based deposition techniques, especially plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering, due to the importance of these materials for microelectronics and related fields. A drawback is the large lattice mismatch between SiC and Si. The insertion of an aluminum nitride (AlN) intermediate layer between them has been shown useful to overcome this problem. Herein, the high-power impulse magnetron sputtering (HiPIMS) technique was used to grow SiC thin films on AlN/Si substrates. Furthermore, SiC films were also grown on Si substrates. A comparison of the structural and chemical properties of SiC thin films grown on the two types of substrate allowed us to evaluate the influence of the AlN layer on such properties. The chemical composition and stoichiometry of the samples were investigated by Rutherford backscattering spectrometry (RBS) and Raman spectroscopy, while the crystallinity was characterized by grazing incidence X-ray diffraction (GIXRD). Our set of results evidenced the versatility of the HiPIMS technique to produce polycrystalline SiC thin films at near-room temperature by only varying the discharge power. In addition, this study opens up a feasible route for the deposition of crystalline SiC films with good structural quality using an AlN intermediate layer.

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“…Furthermore, the complete melting of the silicon layer could promote a tighter substrate bonding than the solid-state sintering of SiC particles. It was previously verified by Tóth et al 24 that using ultrafast lasers (fs), this reaction can be obtained, and according to Galvão et al 25 , the carbonation of a solid SiC target using a CO 2 laser is also possible.…”

Section: Introductionmentioning

confidence: 83%

A New Two-Step Method for Laser Cladding of Silicon Carbide in Wc-Co Substrates

et al. 2023

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WC-Co cutting tools are widely used by the metalworking industry. In order to improve the properties of these tools, research on the application of wear-resistant coatings, such as polycrystalline diamond, are of great importance to several applications. It is known that the occurrence of high-stress levels between the coating and the substrate can lead to adhesion failures. One strategy to minimize these failures is applying an intermediate layer of SiC. In this work, the deposition of a SiC layer was carried out by a novel two-step laser cladding approach. Instead of cladding directly the presynthesized SiC on the substrates, a 200 µm silicon powder layer was pre-deposited on the WC-Co substrates and then irradiated with a 30 W CO 2 laser. To improve metallurgical bonding between the tungsten and the Si layer, all substrates were chemically attacked. This attack allows cobalt removal from the surface and increases surface roughness, improving the laser cladding process. After the SiC laser cladding, samples were coated with a 200 µm graphite powder layer and irradiated again by a CO 2 laser. The samples were characterized by SEM, EDS, and XRD analysis. The results showed that in the first step, an irradiation energy of about 0.27 J was enough to fuse the silicon powder to the substrate and in the second step, 0.13 J was enough to promote the reaction between silicon, carbon and the WC substrate, resulting in the in-situ synthesis of SiC. Finally, a new method was proposed for the deposition of SiC on WC-Co based substrates and the observed results allowed the proposal of an empirical equation to describe the chemical reactions of the process.

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A Novel Method of Synthesizing Graphene for Electronic Device Applications

Cited by 6 publications

References 42 publications

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

Room Temperature Deposition of Nanocrystalline SiC Thin Films by DCMS/HiPIMS Co-Sputtering Technique

The Influence of AlN Intermediate Layer on the Structural and Chemical Properties of SiC Thin Films Produced by High-Power Impulse Magnetron Sputtering

A New Two-Step Method for Laser Cladding of Silicon Carbide in Wc-Co Substrates

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