A novel plasma-based technique for conformal 3D FINFET doping

Han, Ke; Tang, Shan; Rockwell, T.; Godet, Ludovic; Persing, H.; Campbell, C.; Salimian, S.

doi:10.1109/iwjt.2012.6212805

Cited by 6 publications

(4 citation statements)

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“…Another alternative method for nano-scale doping is solid (or liquid) phased diffusion (SPD) technology. Dopant containing compounds are coated on the surface uniformly and then driven into the substrate via rapid thermal diffusion instead of implantation [ 125 , 126 ]. SPD could be carried out in several ways.…”

Section: Implantation and Advanced Doping Methodsmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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Section: Implantation and Advanced Doping Methodsmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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“…Monolayer doping (MLD) is a self-assembly doping process, which can be applied for doping NWs. This doping method is dominated by a surface chemical reaction between the semiconductor substrate and dopant-containing organic molecules [67,68,69,70,71]. Compared to conventional implantation, MLD introduces fewer defects into the substrates [72,73,74,75] and the dopant-containing molecules could attach uniformly on the surface, which results in a better conformal doping profile [73].…”

Section: Monolayer Dopingmentioning

confidence: 99%

Miniaturization of CMOS

Radamson

Zhang

et al. 2019

Micromachines

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When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

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“…An alternative approach to improve conformality is using plasma doping [115][116][117]. The fins were immersed into plasma where the top surface and sidewall of the fins could be conformally doped by appropriate atoms.…”

Section: Conformal Dopingmentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

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A novel plasma-based technique for conformal 3D FINFET doping

Cited by 6 publications

References 0 publications

State of the Art and Future Perspectives in Advanced CMOS Technology

State of the Art and Future Perspectives in Advanced CMOS Technology

Miniaturization of CMOS

The Challenges of Advanced CMOS Process from 2D to 3D

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