IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
DOI: 10.1109/iedm.2004.1419148
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A novel solution for porous low-k dual damascene post etch stripping/clean with supercritical CO/sub 2/ technology for 65nm and beyond applications

C.Y. Wang
1
,
Wenjing Wu
2
,
Chi-Ming Yang
3
et al.
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