A novel TSV inductor structure for RF applications

Kim, Bruce; Mondal, Saikat; Cho, Sang-Bock; Gamboa, Jonathan

doi:10.1109/ectc.2015.7159598

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…The series inductance (L TSV,S ) of a TSV of radius r and length of l TSV is expressed as in (8). Like series resistance, reducing the aspect ratio would also reduce the series inductance, as shown in Fig.…”

Section: B Series Inductance Of Tsvmentioning

confidence: 99%

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Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Mondal

Cho

Kim

2017

IEEE Trans. VLSI Syst.

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In this paper, we present a novel through-siliconvia (TSV)-based 3-D inductor structure with ground TSV shielding for better noise performance. In addition, a circuit model is proposed for the inductor, which can reduce the simulation time over finite-element-based 3-D full-wave simulation. Rigorous 3-D full-wave simulation is performed up to 10 GHz to validate the circuit model. The ground TSV-based 3-D inductor is found to be resilient to TSV-TSV crosstalk noise compared with conventional 3-D inductors. The simulation results revealed that more than −33 dB of isolation can be achieved at 2 GHz between the 3-D inductor and the noise probe.Index Terms-3-D full wave simulation, 3-D inductor, crosstalk, through-silicon-via (TSV) shielding.

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Section: B Series Inductance Of Tsvmentioning

confidence: 99%

“…Ground TSVs not only reduce crosstalk but also provide shielding from outside EMI for reliable inductor performance. However, inserting ground TSVs can degrade the inductance and quality factor by constraining the magnetic field [8]. Hence, the strategic placement of the ground TSVs is required for efficient operation.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Mondal

Cho

Kim

2017

IEEE Trans. VLSI Syst.

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“…Si Via p=z(DT) along with the stress fields generated at that via's location by other vias as equation (5).…”

Section: Lame Problemmentioning

confidence: 99%

“…Tida and colleagues were the first to conduct research on inductance based on TSV in 3D stacked structures [4]. Kim and team studied the applications of TSV inductors in radio frequency and proposed a new TSV inductor structure that uses fewer ground layers [5]. Mondal and associates further researched the grounding shielding issue of TSV inductance and introduced a new lumped-parameter model, reducing the simulation time for TSV inductance [6].…”

Section: Introductionmentioning

confidence: 99%

Modeling and Thermal Stress Coupling Optimization Design of TSV Inductors in On-Chip DC/DC Converters

Wang,

Xiong,

Geng

2023

IEEE Access

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As advances in fabrication technology continue and the power density of microelectronic devices increases, efficient and highly integrated through-silicon via (TSV) inductors have emerged as a viable solution for addressing challenges in power and thermal stress management in on-chip direct currentto-direct current (DC/DC) converters. This study proposes a method for modeling and optimizing TSV inductors with magnetic cores based on thermal stress and lumped circuit. CoZrTa is selected as the magnetic core material, and RLCG circuit modeling is performed for multiple factors, including resistance, inductance value, and parasitic capacitance. To validate the accuracy of the model, simulation tests were conducted using ANSYS HFSS and SPICE tools. The results show that under low-frequency conditions (< 2GHz), the error between the model and the 3D full-wave simulation for L and Q parameters is less than 3.3%, proving the model's accuracy. Furthermore, a deep reinforcement learning optimization design model based on the deep deterministic policy gradients (DDPG) algorithm is proposed, which comprehensively considers factors such as current ripple, power loss, parasitic parameters, and thermal stress. With almost no change in electrical performance, the thermal stress in the optimized TSV inductor array decreased by 11.91% and its distribution was improved, reducing the likelihood of fatigue damage.

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A physics-aware methodology for equivalent circuit model extraction of TSV-inductors

2018

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A novel TSV inductor structure for RF applications

Cited by 8 publications

References 6 publications

Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

Modeling and Thermal Stress Coupling Optimization Design of TSV Inductors in On-Chip DC/DC Converters

A physics-aware methodology for equivalent circuit model extraction of TSV-inductors

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