A novel voltage-controlled ring oscillator based on nanoscale DG-MOSFETs

Kaya, Savaş; Kulkarni, Anish

doi:10.1109/icm.2008.5393792

Cited by 8 publications

(3 citation statements)

References 10 publications

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“…When 'HIGH' is input, 'LOW' is output, and vice versa. As this operation is repeated through feedback, it oscillates between the two voltage levels representing 'HIGH' and 'LOW' [95]. The main purpose of the ring oscillator is to measure the effects of voltage and temperature on a chip and is used mainly to generate a clock signal [96].…”

Section: Ring Oscillatormentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.

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Section: Ring Oscillatormentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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“…: Spectre of CADENCE), however, even though these compact models are efficient in a first time, but they are nevertheless limited in some aspects like the difficulty to have a realistic description of the resistances. So in our case and starting from the selfconsistent model, we achieve a device analysis on a DGMOSFET, then we "build" a LC Colpitts oscillator around this device using a mixed mode simulation with the ISE-TCAD software [20].…”

Section: Phase Noise Oscillatormentioning

confidence: 99%

Effect of High-k Oxide on Double Gate Transistor Embedded in RF Colpitts Oscillator

Bella¹,

Latreche²,

Gontrand³

2016

J. Nano- Electron. Phys.

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This paper present a comprehensive analysis of LC Colpitts Oscillator built around a DGMOS (Double Gate Metal Oxide Semiconductor) transistor using high-k technology. A mixed-mode simulation is involved, applying a quantum model to the device whereas the rest of the considered circuit is governed by Kirchhoff"s laws. The quantum device model correspond to 2D numerical calculations based on self-consistent codes coupling Poisson and Schrödinger equation along the transport direction, considering an effective mass approximation. A comparison with Drift Diffusion model (DDM) is made in order to point out importance of quantum effect in this nanometer device. The impact of high-k oxide gate is investigated and analyzed; the results confirm that the high-k is an interesting alternative to reduce tunneling gate current of the DGMOS transistor but reach the same drain one. Considering the oscillator, our goal is focused on the analysis of its phase noise. The Linear Time Variant (LTV) model of phase noise is considered. It is based on the Impulse Sensitivity Function (ISF) which describes carefully the sensitivity of an oscillator to a parasite impulse current injection in different nodes of the circuit. The obtained results pointed out that the ISF function is sinusoidal and its period is nearly the same of the oscillator output signal for different dielectric oxide. It also states that the phase noise of a Colpitts oscillator is not affected by the use of the high-k materials. Finally this method, if extended, is a good tool to investigate a perturbation response on such circuits.

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“…A preliminary study of phase noise and jitter performance on the VCRO structure has revealed that, the proposed VCRO circuit has mediocre characteristics in terms of stability and may not be used for timing or system clock circuits. However, they will still be very attractive options for simple sensing and counting circuits as well as local oscillators in the communication circuits (Kaya & Kulkarni, 2008) …”

Section: Voltage-controlled Ring Oscillator (Vcro)mentioning

confidence: 99%