A Numerical Procedure to Determine the Power Intake/Delivery Capacity of a GaN RF Power Transistor over Broadband

Abstract

In this paper, a novel "Real Frequency Line Segment Technique" based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called "Virtual Gain Optimization" is presented. Finally, a new definition called "Power-Performance-Product" is introduced to measure the quality of an active device. Examples are presented to assess the gain-bandwidth limitations of the given source and load pull impedances for the 45W-GaN power transistor of Wolfspeed "CG2H40045" over 0.8 -3.8 GHz bandwidth.